{"id":1752,"date":"2022-01-24T12:42:46","date_gmt":"2022-01-24T12:42:46","guid":{"rendered":"https:\/\/akademperiodyka.org.ua\/en\/?p=1752"},"modified":"2025-07-10T08:54:00","modified_gmt":"2025-07-10T08:54:00","slug":"physico-technological_aspects_of_degradation_of_silicon_microwave_diodes","status":"publish","type":"post","link":"https:\/\/akademperiodyka.org.ua\/en\/books\/physico-technological_aspects_of_degradation_of_silicon_microwave_diodes\/","title":{"rendered":"Physico-technological aspects of degradation of silicon nicrowave diodes"},"content":{"rendered":"
\n
\n
Project: Ukrainian scientific book in a foreign language<\/div>\n<\/div>\n
\n
Editors: A.E. Belyaev, N.S. Boltovets, E.F. Venger, Ya.Ya. Kudryk, V.V. Milenin, G.V. Milenin<\/strong><\/div>\n<\/div>\n
\n
Year: 2011<\/div>\n<\/div>\n
\n
Pages: 182<\/div>\n<\/div>\n
\n
ISBN: 978-966-360-176-2<\/div>\n<\/div>\n
\n
Publication Language: English<\/div>\n<\/div>\n
\n
Publisher: PH “Akademperiodyka”<\/div>\n<\/div>\n
\n
Place Published: Kyiv<\/div>\n<\/div>\n
\n
doi: https:\/\/doi.org\/10.15407\/akademperiodyka.176.182<\/a><\/div>\n<\/div>\n<\/div>\n
<\/div>\n
\n
\n<\/div>\n
\n
\n
\n
\n
The monograph deals with the physical phenomena occurring in the metal-semi- conductor junction layer and at microwave diode breakdown, as well as methodology of the catastrophe theory when predicting failures for silicon diodes and transistors. The methods of measurements of the parameters of ohmic and barrier contacts, as well as degradation mechanisms in silicon microwave diodes related to the physico-chemical and structural properties of metal-semiconductor interfaces, quality of the initial semi\u00adconductor material and p-n junction perfection, are considered. The experimental data on the techniques of defect gettering in microwave diode structures, in particular, the low-tempcrature and non-heating gettering processes that improve the parameters of semiconductor devices, are presented.<\/div>\n
The monograph is intended for researchers and those engaged in development of microwave devices. It may be of use also to post-graduates and under-graduates special\u00adizing in the corresponding areas.<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n
<\/div>\n
\n
\n<\/div>\n
\n
\n

References:<\/h4>\n<\/div>\n<\/div>\n
<\/div>\n
\n
\n
\n
\n

1. S.I. Rebrov. PZhE no 3-4, 122-134, 2004.* https:\/\/doi.org\/10.1001\/archopht.122.1.134-b<\/a><\/p>\n

2. Yu.P. Dokuchaev, V.F. Sinkevich, P.V. Taran. PZhE no 3-4, 135- 146, 2004.*<\/p>\n

3. T.N. Narytnik, V.P. Babak, M.E. Il’chenko, S.A. Kravchuk. Microwave Technologies in Telecommunication Systems, Tekhnika, Kiev,2000.<\/p>\n

4. V.E. Borisenko. Solid-Phase Processes in Semiconductors at Pulse Heating, Navuka i Tekhnika, Minsk, 1992.*<\/p>\n

5. V.A. Pilipenko. Rapid Thermal Processing in VLSI Technology, Tsentr BGU, Minsk, 2004.*<\/p>\n

6. V. Mironov. The Foundations of Scanning Probe Microscopy, Tekhnosfera, Moscow, 2005.*<\/p>\n

7. G. Binning, H. Rohrer. Helv. Phys. Acta 55(6), 726-735, 1982.<\/p>\n

8. Practical Surface Analysis – Auger and X-ray Photoelectron Spectroscopy (eds. D. Briggs, M.P. Seah), Wiley Interscience, 1990.<\/p>\n

9. C. Feldman, J.W. Mayer, Fundamentals of Surface and Thin Film Analysis, North-Holland, New York\u2212Amsterdam\u2212London, 1986.<\/p>\n

10. V.A. Burobin. PZhE no 3-4, 153-160, 2004.* https:\/\/doi.org\/10.1016\/j.ins.2003.08.012<\/a><\/p>\n

11. I.E. Voronkov, S.P. Khodnevich, A.D. Khodnevich. ET Ser. 8, no 5(83), 11-23, 1980.*<\/p>\n

12. I.E. Voronkov. ET Ser. 8, no 5(110), 3-7, 1984.*<\/p>\n

13. I.E. Voronkov, A.D. Khodnevich. ET Ser. 1, no 12(324), 7-11, 1980.*<\/p>\n

14. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*<\/p>\n

15. I.L. Zaitsevskii, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. Phys. Stat. Sol. (a) 53, K153-K156, 1979. https:\/\/doi.org\/10.1002\/pssa.2210530246<\/a><\/p>\n

16. I.E. Voronkov, A.D. Khodnevich, S.P. Khodnevich. ET Ser. 1, no 7, 103-105, 1976.*<\/p>\n

17. I.E. Voronkov, N.A. Kozlov, A.N. Rabodzey, V.F. Sinkevich. ET Ser. 2, no 2, 82-86, 1988.*<\/p>\n

18. A.M. Nechaev, V.F. Sinkevich. ET Ser. 8, no 3(114), 3-5, 1985.*<\/p>\n

19. V.I. Faynberg. PTM no 32, 49-53, 1980.* https:\/\/doi.org\/10.1353\/boc.1980.0031<\/a><\/p>\n

20. R.V. Konakova, V.I. Faynberg, L.V. Scherbina, M.Yu. Filatov. ET Ser. 2, no 5(164), 87-89, 1983.* \u2217 In Russian (throughout the list of references)<\/p>\n

21. R.V. Konakova, Yu.A. Tkhorik, V.I. Faynberg. ET Ser. 8, no 3(114), 24-29, 1985.*<\/p>\n

22. E.A. Soloviev. ET Ser. 8, no 1(304), 57-58, 1989.* https:\/\/doi.org\/10.2307\/43629259<\/a><\/p>\n

23. A.N. Rapoport, V.I. Faynberg. ET Ser. 2, no 2(205), 97-99, 1990.*<\/p>\n

24. A.N. Rapoport, V.I. Faynberg. ET Ser. 8, no 1, 59, 1989.*<\/p>\n

25. I.L. Zaitsevskii, R.V. Konakova, V.I. Shakhovtsov, Yu.A. Tkhorik. Sol. State Electron. 23(3), 401-403, 1980.* https:\/\/doi.org\/10.1016\/0038-1101<\/a>(80)90209-9<\/p>\n

26. R.V. Konakova, A.N. Rapoport, E.A. Soloviev, Yu.A. Tkhorik, V.I. Faynberg, M.Yu. Filatov, S.P. Khodnevich. Preprint no 1, Kiev, IP AN UkrSSR, 1990.*<\/p>\n

27. I.L. Zaytsevskiy, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. In: Radiation Effects in Semiconductor Systems, 16-17, Naukova Dumka, Kiev, 1976.*<\/p>\n

28. I.L. Zaytsevskiy, R.V. Konakova, G.N. Semenova, Yu.A. Tkhorik, M.Yu. Filatov. In: Plasma and Instabilities in Semiconductors, 119-120, Vaga, Vilnius, 1977.*<\/p>\n

29. I.L. Zaytsevskiy, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 116-120, Naukova Dumka, Kiev, 1978.*<\/p>\n

30. Yu.A. Tkhorik, R.V. Konakova, V.I. Faynberg. Vestnik AN UkrSSR no 10, 33-39, 1983.*<\/p>\n

31. V.I. Fineberg, R.V. Konakova, L.V. Shcherbina, N.S. Boltovets. Phys. Stat. Sol. (a), 68(1), 39- 43, 1981. https:\/\/doi.org\/10.1002\/pssa.2210680105<\/a><\/p>\n

32. A.D. Khodnevich, I.E. Voronkov. ET Ser. 1, no 11, 49-55, 1984.*<\/p>\n

33. R.V. Konakova, P. Kordo\u0161, Yu.A. Tkhorik, V.I. Faynberg, F. \u0160tofanik. Reliability Prediction for the Semiconductor Avalanche Diodes, Naukova Dumka, Kiev, 1986.*<\/p>\n

34. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Ve rimeychenko. SQO 4(1), 5-9, 2001.<\/p>\n

35. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, V.A. Pilipenko. Interstitial Phases in the Technology of Semiconductor Devices and VLSI, NTK “Institute for Single Crystals”, Kharkov, 2008.*<\/p>\n

36. L.A. Seidman. OET Ser. 2, no 6(1366), 1988.*<\/p>\n

37. M.-A. Nicolet. Thin Solid Films 52(3), 415-443, 1978. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(78)90184-0<\/p>\n

38. E.F. Uvarov. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 5-9, Naukova Dumka, Kiev, 1978.*<\/p>\n

39. M.I. Markovich, E.N. Vologdin, P.T. Barmina. In: Physical Foundations of Radiation Technology for Solid-State Electronic Devices, 151-175, Naukova Dumka, Kiev, 1978.*<\/p>\n

40. L.S. Smirnov, In: Proc. VII Winter School on Physics of Semiconductors, 232-244, LIYaF, Leningrad, 1975.*<\/p>\n

41. Problems in Radiation Technology of Semiconductors (ed. L.S. Smirnov), Nauka SO AN SSSR, Novosibirsk, 1980.*<\/p>\n

42. R.V. Konakova, \u042e.\u0410. Tkhorik, L.S. Khazan. In: Gallium Arsenide (ed. V.I. Gaman), 183-185, TGU, Tomsk, 1982.*<\/p>\n

43. Yu.A. Tkhorik, L.S. Khazan. Plastic Deformation and Misfit Dislocations in Heteroepitaxial Systems, Naukova Dumka, Kiev, 1983.*<\/p>\n

44. O.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.G. Litovchenko, Yu.A. Tkhorik, V.I. Shakhovtsov. Preprint IF AN UkrSSR no 6, 1986.*<\/p>\n

45. T. Brozhek, V.Ya. Kiblik, V.G. Litovchenko, R.O. Litvinov, L.G. Plotnikova. Preprint IP AN UkrSSR no 4-88, 1988.*<\/p>\n

46. R.V. Konakova, \u042e.\u0410. Tkhorik, L.S. Khazan. ET Ser. 2, no 2, 47-56, 1988.*<\/p>\n

47. V.S. Vavilov, B.M. Gorin, N.S. Danilin, A.E. Kiv, Yu.L. Kurov, V.I. Shakhovtsov. Radiation Techniques in Solid-State Electronics, Radio i Svyaz’, Moscow, 1990.*<\/p>\n

48. Radiation-Induced Processes in Silicon (ed. Sh.A. Vakhidov), FAN, Tashkent, 1977.*<\/p>\n

49. Physical Properties of Irradiated Silicon (eds. M.S. Yunusov, L.P. Khiznichenko), FAN, Tashkent, 1987.*<\/p>\n

50. Subthreshold Radiation Effects in Semiconductors (eds. M.S. Yunusov, L.P. Khiznichenko), FAN, Tashkent, 1989.*<\/p>\n

51. A.P. Mamontov, I.P. Chernov. Effect of Low-Doze Ionizing Radiation, Energoatomizdat, Moscow, 2001.*<\/p>\n

52. V.N. Brudnyi, V. Peshev, A.P. Surzhakov. Radiation-Induced Defect Production in Electric Fields. Gallium Arsenide, Indium Phosphide, Nauka, Novosibirsk, 2001.*<\/p>\n

53. F.P. Korshunov, G.V. Gatal’skii, G.M. Ivanov. Radiation Effects in Semiconductor Devices, Nauka i Tekhnika, Minsk, 1978.*<\/p>\n

54. F.P. Korshunov, Yu.V. Bogatyrev, V.A. Vavilov. Effect of Radiation on ICs, Nauka i Tekhnika, Minsk, 1986.*<\/p>\n

55. E.R. Astvatsatur’yan, D.V. Gromov, V.M. Lomako. Radiation Effects in Gallium Arsenide Devices and ICs, Universitetskoe, Minsk, 1992.*<\/p>\n

56. V.I. Strikha. Theoretical Foundations of Metal\u2212Semiconductor Contact Operation, Naukova Dumka, Kiev, 1974.*<\/p>\n

57. E.V. Buzaneva. Microstructures of Integrated Electronics, Radio i Svyaz’, Moscow, 1990.*<\/p>\n

\u00a058. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal\u2212Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*<\/p>\n

59. V.V. Il’chenko, V.I. Strikha. FTP 18(5), 873-876, 1984.* https:\/\/doi.org\/10.1016\/0036-9748<\/a>(84)90252-7<\/p>\n

60. V.V. Il’chenko, V.G. Levandovskii, V.I. Strikha. UFZh 32(2), 290-295, 1987.*<\/p>\n

61. V.V. Il’chenko, V.I. Strikha. Izv. Vuzov. Fizika no 2, 88-92, 1985.*<\/p>\n

62. E.V. Buzaneva, V.G. Levandovskii, V.I. Strikha. RE 30(7), 1403-1408, 1985.*<\/p>\n

63. A.M. Voskoboynikov, V.I. Strikha, D.I. Sheka. Vestn. Kievskogo Univ. Ser. Fizika no 25, 112- 119, 1984.*<\/p>\n

64. A.N. Korol, D.I. Sheka. In: Schottky-Barrier Semiconductor Devices, 123-128, Naukova Dumka, Kiev, 1979.*<\/p>\n

65. N.L. Dmitruk. Izv. Vuzov. Fizika no 1, 38-51, 1980.*<\/p>\n

66. N.L. Dmitruk, \u041e.Yu. Borkovskaya. ME 4(1), 64-70, 1979.*<\/p>\n

67. N.L. Dmitruk, \u0410.\u041a. Tereschenko. ET Ser. 2, no 4, 68-72, 1973.*<\/p>\n

68. A.P. Vyatkin, N.K. Maksimova, N.G. Filonov. Vestn. Tomskogo Gos. Univ. Ser. Fizika no 285, 121-128, 2005.*<\/p>\n

69. V.G. Bozhkov, V.S. Lukash. Vestn. Tomskogo Gos. Univ. Ser. Fizika no 285, 129-138, 2005.*<\/p>\n

70. Yu.A. Gol’dberg, D.N. Nasledov, B.V. Tsarenkov. PTE no 6, 180-184, 1966.*<\/p>\n

71. T.V. Blank, Yu.A. Gol’dberg. FTP 41(11), 1281-1308, 2007.*<\/p>\n

72. T.V. Blank, Yu.A. Gol’dberg, O.V. Konstantinov, V.G. Nikitin, E.A. Posse. FTP 40(10), 1204- 1208, 2006.* https:\/\/doi.org\/10.1134\/S1063782606100095<\/a><\/p>\n

73. W. Schottky. Naturwissenschaften 26, 843, 1938. https:\/\/doi.org\/10.1007\/BF01774216<\/a><\/p>\n

74. N.F. Mott. Proc. Camb. Philos. Soc. 34, 568-572, 1938. https:\/\/doi.org\/10.1017\/S0305004100020570<\/a><\/p>\n

75. B.I. Davydov. Fizika 1, 167, 1939.* https:\/\/doi.org\/10.1136\/bmj.1.4073.167<\/a><\/p>\n

76. J. Bardeen. Phys. Rev. 71(10), 717-727, 1947. https:\/\/doi.org\/10.1103\/PhysRev.71.717<\/a><\/p>\n

77. F.A. Padovani, R. Stratton. Sol. State Electron. 9(7), 695-707, 1966. https:\/\/doi.org\/10.1016\/00381101<\/a>(66)90097-9<\/p>\n

78. E.H. Rhoderick. Metal\u2212Semiconductor Contacts, Clarendon Press, Oxford, .1978.<\/p>\n

79. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.<\/p>\n

80. J.C. Bose. US Patent N778440, 1904.<\/p>\n

81. G.W. Pickard. US Patent N836531, 1906.<\/p>\n

82. W. Shockley. BSTJ 28(3), 435-489, 1949. https:\/\/doi.org\/10.1002\/j.1538-7305.1949.tb03645.x<\/a><\/p>\n

83. J.R. Arthur. J. Appl. Phys. 39(8), 4032-4037, 1968. https:\/\/doi.org\/10.1063\/1.1656901<\/a><\/p>\n

84. J.R. Arthur, J.J. LePore. JVST (B) 6(4), 545-548, 1969. https:\/\/doi.org\/10.1116\/1.1315677<\/a><\/p>\n

85. A.Y. Cho. JVST 8(5), S31-S38, 1971. https:\/\/doi.org\/10.1116\/1.1316387<\/a><\/p>\n

86. A.Y. Cho. JVST 16(2), 275-284, 1979. https:\/\/doi.org\/10.1116\/1.569926<\/a><\/p>\n

87. V.V Anashin, G.G. Emelin, B.Z. Katner, V.P. Migal’, E.Ya. Pogodaev, O.P. Pchelyakov, A.V. Rzhanov, S.I. Stenin, A.I. Toropov. Preprint AN SSSR SO Novosibirsk: IFP, no 1, 1985.*<\/p>\n

88. A.V. Arkhipenko, Yu.A. Blyumkina, M.A. Lamin, O.P. Pchelyakov, L.V. Sokolov, S.I. Stenin, N.I. Kozlov, A.V. Rzhanov. Poverkhnost’:no 1, 93-96, 1985.*<\/p>\n

89. P.S. Kop’ev, N.N. Ledentsov. FTP 22(10), 1729-1742, 1988.*<\/p>\n

90. A.L. Aseev, O.P. Pchelyakov, A.I. Toropov. Izv. Vuzov. Fizika no 6, 21-26, 2003.*<\/p>\n

91. L. Esaki, L.L. Chang. C.R.C. Orit.-Rev. Solid State Sci. 6(2), 195-208, 1976. https:\/\/doi.org\/10.1080\/10408437608243555<\/a><\/p>\n

92. S.F. Luy, A. Gasel, W. Behr, E. Kasper. IEEE Trans. Electron. Dev. 34(5), 1084-1089, 1987. https:\/\/doi.org\/10.1109\/T-ED.1987.23049<\/a><\/p>\n

93. K. Ploog, A. Fischer. JVST (B) 16(2), 290-294, 1979. https:\/\/doi.org\/10.1Chapter<\/a> 1<\/p>\n

1. E.V. Kulikova, I.V. Ryzhikov, Yu.I. Sidorov. ET Ser. 2, no 3, 3-27, 1971.*https:\/\/doi.org\/10.1002\/chin.197127173<\/a><\/p>\n

2. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.<\/p>\n

3. E.H. Rhoderick. Metal\u2212Semiconductor Contacts, Clarendon Press, Oxford, 1978.<\/p>\n

4. V.I. Strikha. Contact Phenomena in Semiconductors, Vyscha Shkola, Kiev, 1982.*<\/p>\n

5. M. Shur. GaAs Devices and Circuits, Plenum Press, New York and London, 1987. https:\/\/doi.org\/10.1007\/978-1-4899-1989-2<\/a><\/p>\n

6. F.A. Padovani, R. Stratton. Sol. State Electron. 9(7), 695-707, 1966. https:\/\/doi.org\/10.1016\/0038<\/a> 1101(66)90097-9<\/p>\n

7. A.Y.C. Yu. Sol. State Electron. 13(2), 239-247, 1970. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(70)90056-0<\/p>\n

8. C.Y. Chang, Y.K. Fang, S.M. Sze. Sol. State Electron. 14(7), 529-645, 1971. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(71)90129-8<\/p>\n

9. E.B. Kaganovich, S.V. Svechnikov. In: The Republican Interagency Collection of Scientific Papers, no 21, 1-11, Naukova Dumka, Kiev, 1991.*<\/p>\n

10. R.H. Cox, H. Strack. Sol. State Electron. 10(12), 1213-1218, 1967. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(67)90063-9<\/p>\n

11. R.D. Brooks, \u041d.G. Mathes. BSTJ 50, 775-784, 1971. https:\/\/doi.org\/10.1002\/j.1538-7305.1971.tb01882.x<\/a><\/p>\n

12. H. Morko\u00e7. Handbook of Nitride Semiconductors and Devices, vol. 2. Electronic and Optical Processes in Nitrides, Wiley-VCH, 2008. https:\/\/doi.org\/10.1002\/9783527628414<\/a><\/p>\n

13. K.C. Saraswat. http:\/\/www.stanford.edu\/class\/ee311\/NOTES\/Ohmic_Contacts.pdf<\/a><\/p>\n

14. M. Lijadi, F. Pardo, N. Bardou, J-L. Pelouard. Sol. State Electron. 49, 1655-1661, 2005. https:\/\/doi.org\/10.1016\/j.sse.2005.06.023<\/a><\/p>\n

15. G.K. Reeves. Sol. State Electron. 23(5), 487-490, 1980. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(80)90086-6<\/p>\n

16. A.N. Andreev, M.G. Rastegaeva, V.P. Rastegaev, S.A. Reshanov. FTP 32(7), 832-838, 1998.* https:\/\/doi.org\/10.1134\/1.1187496<\/a><\/p>\n

17. N. Stavitski, M.J.H. van Dal, J.H. Klootwijk, R.A.M. Wolters, A.Y. Kovalgin, J. Schmitz In: Proc. 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands, 436-438.<\/p>\n

18. E. Kuphal. Sol. State Electron. 24(1), 69-78, 1981. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(81)90214-8<\/p>\n

19. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov SQO 10(4), 1-8, 2007.<\/p>\n

20. W. G\u00f6tz, N.M. Johnson, C. Chen, H. Lin, C. Kuo, W. Imler. Appl. Phys. Lett. 68(22), 3144- 3146, 1996. https:\/\/doi.org\/10.1063\/1.115805<\/a><\/p>\n

21. A.P. Vetrov. Candidate of Phys.-Math. Sci. Thesis, Kiev University, 1989.*<\/p>\n

22. V.I. Shashkin, A.V. Murel. FTP 42(4), 500-502, 2008.* https:\/\/doi.org\/10.1134\/S1063782608040210<\/a><\/p>\n

23. V.G. Bozhkov, S.E. Zaitsev. Izv. Vuzov. Fizika 48(10), 77-85, 2005.* https:\/\/doi.org\/10.1007\/s11182-006-0029-5<\/a><\/p>\n

24. P.A. Ivanov, L.S. Kostina, A.S. Potapov, T.P. Samsonova, E.I. Belyakova, T.S. Argunova, I.V. Grekhov. FTP 41(8), 941-944, 2007.* https:\/\/doi.org\/10.1134\/S1063782607080106<\/a><\/p>\n

25. V.A. Pilipenko, V.N. Ponomar, V.A. Gorushko, A.A. Soloninko. Physical Measurements in Microelectronics, BGU, Minsk, 2003.*<\/p>\n

26. V.A. Emelyanov, V.V. Baranov, L.D. Buyko, T.V. Petlitskaya. The Methods of Parameter Control for Solid-State VLSI Structures, Bestprint, Minsk, 1998.*<\/p>\n

27. V.A. Emelyanov, V.V. Baranov, T.V. Petlitskaya, L.D. Buyko, N.K. Kasinskii. The Hardware for Control of Solid-State Structure Parameters in VLSI Manufacturing, Bestprint, Minsk, 1997.*<\/p>\n

28. N.A. Charykov, M.L. Belousov, M.V. Perevozchikov, Yu.V. Oreshnikov, V.N. Danilin, T.A. Zhukova. In: Abstracts of the All-Russia Conf. “Gallium, Indium and Aluminum Nitrides – Structures and Devices”, Moscow, 1-2 Nov. 2001, 17.*<\/p>\n

29. V.T. Kremen, PTE no 5, 158-160, 1998.* https:\/\/doi.org\/10.1016\/S1353-1131<\/a>(98)90051-7<\/p>\n

30. R.V. Konakova, O.E. Rengevich, A.M. Kurakin, Ya.Ya. Kudryk. SQO 5(4), 449-452, 2002.116\/1.569929<\/p>\n

Chapter 2<\/p>\n

1. L.J. Brillson. Surf. Sci. Reports 2, 123-326, 1982. https:\/\/doi.org\/10.1016\/0167-5729<\/a>(82)90001-2<\/p>\n

2. I. Lindau, T. Kendelewicz, N. Hewman, R.S. List, M.D. Williams, W.E. Spicer. Surf. Sci. 162(1-3), 591-604, 1985. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(85)90953-7<\/p>\n

3. Physics and Chemistry of III\u2212V Compound Semiconductor Interfaces (ed. C.W. Wilmsen), Plenum Press, New-York, 1985.<\/p>\n

4. L.J. Brillson. J. Phys. Chem. Solids 44(8), 703-733, 1983. https:\/\/doi.org\/10.1016\/0022-3697<\/a>(83)90002-1<\/p>\n

5. G. Platero, J.A. Verges, F. Flores. Surf. Sci. 168(1-3), 100-104, 1986. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(86)90839-3<\/p>\n

6. W. M\u00f6nch. Rep. Progr. Phys. no 53, 221-278, 1990. https:\/\/doi.org\/10.1088\/0034-4885\/53\/3\/001<\/a><\/p>\n

7. N.L. Dmitruk, O.Yu. Maeva. OPT no 17, 29-40, 1990.*<\/p>\n

8. F Bechstedt, R. Enderlein. Semiconductor Surfaces and Interfaces. Their Atomic and Electronic Structures, Akademie-Verlag, Berlin, 1988.<\/p>\n

9. \u0422hin Films. Interdiffusion and Reactions (eds. J.M. Poate, K.N. Tu, W. Mayer), Wiley. 1978.<\/p>\n

10. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal\u2212Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*<\/p>\n

11. Modern Problems of Physical Chemistry of Semiconductor Surface (eds. A.V. Rzhanov, S.M. Repinskii), Nauka SO, Novosibirsk, 1988.*<\/p>\n

12. R.L. Van Melrhaegne. In: Frontiers in Nanoscale Science of Micron\/Submicron Devices (eds. A.-P. Jauho, E.V. Buzaneva), 315-328, NATO ASI Series, Ser. E: Appl. Sci., Kiev, Ukraine, Aug. 16-26, 1995.<\/p>\n

13. V.G. Bozhkov, K.V. Soldatenko, A.A. Yatis. In: Semiconductor Schottky-Barrier Devices (ed. V.I. Strikha), 48-52, Naukova Dumka, Kiev, 1979.*<\/p>\n

14. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, I.V. Prokopenko. Interactions Between Phases and Degradation Mechanisms in the metal\u2212InP and metal\u2212GaAs Structures, Nauchnaya Kniga, Kiev, 1999.*<\/p>\n

15. J. Breza, E.F. Venger, R.V. Konakova, V.G. Lyapin, V.V. Milenin, V.A. Statov, Yu.A. Tkhorik. Poverkhnost’ no 5, 110-125, 1998.*<\/p>\n

16. S.P. \u041curarka. Silicides for VLSI Application, Academic Press. New York – London. 1983.<\/p>\n

17. VLSI Electronics: Microstructure Science (eds. N.G. Einspruch, W.R. Wisseman), vol. 11 (GaAs Microelectronics), Academic Press, Orlando et al., 1985.<\/p>\n

18. A. Hiraki. Surf. Sci.Reports 3(7), 357-412, 1983. https:\/\/doi.org\/10.1016\/0167-5729<\/a>(84)90003-7<\/p>\n

19. A.P. Vyatkin, N.K. Maksimova. In: New Materials in Semiconductor Engineering, 32-48, Nauka SO, Novosibirsk, 1990.*<\/p>\n

20. B.A. Nesterenko, O.V. Snitko. Physical Properties of Atomically-Clean Semiconductor Surface, Naukova Dumka, Kiev, 1983.*<\/p>\n

21. V.G. Litovchenko. The Foundations of Physics of Semiconductor Layered Systems, Naukova Dumka, Kiev, 1983.*<\/p>\n

22. F.G. Allen, G.W. Gobeli. Phys. Rev. 127(1), 150-158, 1962. https:\/\/doi.org\/10.1103\/PhysRev.127.150<\/a><\/p>\n

23. B.A. Nesterenko. Appl. Surf. Sci. 33-34, 21-30, 1988. https:\/\/doi.org\/10.1016\/0169-4332<\/a>(88)90283-8<\/p>\n

24. V.A. Grazhulis. Surf. Sci. 168(1-3), 16-27, 1986. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(86)90831-9<\/p>\n

25. W. M\u00f6nch. Surf. Sci. 299-300(1), 928-944, 1994. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(94)90707-2<\/p>\n

26. B.A. Nesterenko, A.V. Brovii. Poverkhnost’ no 12, 65-71, 1987.*<\/p>\n

27. J.G. Clabes, G.W. Rubloff, B. Reihl, R.J. Purtell, P.S. Ho, A. Zartner, F.J. Himpsel, D.E. Eastman. JVST 20(3), 684-687, 1982. https:\/\/doi.org\/10.1116\/1.571628<\/a><\/p>\n

28. A.D. Katnani, N.G. Stoffel, H.S. Edelman, G. Margaritondo. JVST 19(3), 290-293, 1981. https:\/\/doi.org\/10.1116\/1.571051<\/a><\/p>\n

29. S. Ciraci, I.P. Batra. Phys. Rev. Lett. 56(8), 877-880, 1986. https:\/\/doi.org\/10.1103\/PhysRevLett.56.877<\/a><\/p>\n

30. N.L. Dmitruk. Izv. Vuzov. Fizika no 1, 38-51, 1980.*<\/p>\n

31. A. Amith, P. Mark. JVST 15, 1344-1352, 1978. https:\/\/doi.org\/10.1116\/1.569763<\/a><\/p>\n

32. J.M. Palau, E. Testemale, A. Ismail, L. Lassabatere. Sol. State Electron. 25(4), 285-294, 1982. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(82)90137-X<\/p>\n

33. T. Yoshiie, C.L. Bauer, A.G. Milnes. Thin Solid Films 111(2), 149-166, 1984. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(84)90483-8<\/p>\n

34. O.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.V. Milenin, A.A. Naumovets, B.A. Nesterenko. Poverkhnost’ no 6, 61-68, 1994.*<\/p>\n

35. S. Chang, L.S. Brillson, D.F. Rioux, Y.J. Kime, P.D. Kirchner, G.D. Pettit, J.M. Woodall. JVST B 8(4), 1008-1013, 1990..<\/p>\n

36. A.A. Aristarkhova, S.S. Volkov, V.V. Trukhin, G.N. Shuppe. Poverkhnost’ no 11, 107-113, 1990.*<\/p>\n

37. S.P. Kowalzyk, J.R. Waldrop, R.W. Grant. JVST 19(3), 611-616, 1981. https:\/\/doi.org\/10.1116\/1.571140<\/a><\/p>\n

38. J.M. Woodall, J.L. Freeouf. JVST 19(3), 794-798, 1981. https:\/\/doi.org\/10.1116\/1.571150<\/a><\/p>\n

39. V.A. Batenkov, L.V. Fomina. In: Proc. 8th Russian Conf. “Gallium Arsenide and III\u2212V Semiconductor Compounds” GaAs-2002, 341-343, TGU, Tomsk, 2002.*<\/p>\n

40. V.I. Strikha, E.V. Buzaneva, I.A. Radzievskii. Schottky-Barrier Semiconductor Devices. Sovetskoe Radio, Moscow, 1974.*<\/p>\n

41. B.A. Nesterenko, V.G. Lyapin. Phase Transitions at Free Faces and Boundaries Between Phases in Semiconductors, Naukova Dumka, Kiev, 1990.<\/p>\n

42. Sebenne C.A. In: Proc. 17th Intern. \u0421onf. on the Physics of Semiconductors (San Francisco, Aug. 6-10, 1984, eds. J.D. Chadi, W.A. Harrison), 143-148, Springer-Verlag, New York, 1985.<\/p>\n

43. B.A. Nesterenko, O.A. Stadnik. Surf. Sci. 331-333(2), 1262-1266, 1995.. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(95)00315-0<\/p>\n

44. N.V. Rozhanskii, A.T. Akimov. Poverkhnost’ no 12, 57-68, 1990.*<\/p>\n

45. Yu.D. Tretyakov. Solid-Phase Reactions, Khimiya, Moscow, 1978.*<\/p>\n

46. K. Okuno, T. Ito, M. Iwami, A. Hiraki. Sol. State Commun. 34(6), 493-497, 1980.. https:\/\/doi.org\/10.1016\/0038-1098<\/a>(80)90659-6<\/p>\n

47. G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer. Phys. Rev B 25(6), 3627-3636, 1982. https:\/\/doi.org\/10.1103\/PhysRevB.25.3627<\/a><\/p>\n

48. A. Franciosi, D.J. Peterman, J.H. Weaver, J.L. Moruzzi. Phys. Rev.B 25(8), 4981-4993, 1982. https:\/\/doi.org\/10.1103\/PhysRevB.25.4981<\/a><\/p>\n

49. V.G. Lifshits. Electron Spectroscopy and Atomic Processes at Silicon Surface, Nauka, Moscow, 1985.*<\/p>\n

50. N.N. Berchenko, N.R. Aigina. ZET no 10, 3-81, 1986.*<\/p>\n

51. G. Rossi. Surf. Sci. Reports 7(1), 1-101, 1987. https:\/\/doi.org\/10.1016\/0167-5729<\/a>(87)90005-7<\/p>\n

52. R.A. Butera, C.A. Hollingsworth. Phys. Rev. 37(18), 10487-10495, 1988. https:\/\/doi.org\/10.1103\/PhysRevB.37.10487<\/a><\/p>\n

53. N.I. Plyusnin, A.P. Milenin. Poverkhnost’ no 3, 36-45, 1997.*<\/p>\n

54. R.T. Tung. Mater. Sci. and Eng. R: Reports 35(1), 1-138, 2001. https:\/\/doi.org\/10.1016\/S0927-796X<\/a>(01)00037-7<\/p>\n

55. G. Ottaviani. JVST 18(3), 924-928, 1981. https:\/\/doi.org\/10.1116\/1.570995<\/a><\/p>\n

56. M. Ronay. Appl. Phys. Lett. 42(7), .577-580, 1983. https:\/\/doi.org\/10.1063\/1.94007<\/a><\/p>\n

57. G. Ottaviani, K.N. Tu, J.W. Mayer. Phys. Rev. B 24(6), 3354-3359, 1981. https:\/\/doi.org\/10.1103\/PhysRevB.24.3354<\/a><\/p>\n

58. K.N. Tu. Appl. Phys. Lett. 24(4), 221- 224, 1975. https:\/\/doi.org\/10.1246\/cl.1975.221<\/a><\/p>\n

59. V.V. Kononenko. Preprint no 376, IF AN BSSR, Minsk, 1985.*<\/p>\n

60. W.Z. Schottky. Z. Phys. 118(9-10), 539-592, 1942. https:\/\/doi.org\/10.1007\/BF01329843<\/a><\/p>\n

61. J. Bardeen. Phys. Rev. 71(10), 717-727, 1947. https:\/\/doi.org\/10.1103\/PhysRev.71.717<\/a><\/p>\n

62. V. Heine. Phys. Rev. A 138(6), A1689-A1696, 1965. https:\/\/doi.org\/10.1103\/PhysRev.138.A1689<\/a><\/p>\n

63. I. Lindau, P.W. Chye, C.M. Garner, P. Pianetta, C.Y. Su, W.E. Spicer. JVST 15(4), 1332-1339, 1978. https:\/\/doi.org\/10.1116\/1.569761<\/a><\/p>\n

64. Sh.G. Askerov. PZhTF 3(18), 968-970, 1977.* https:\/\/doi.org\/10.1016\/0032-3861<\/a>(77)90148-3<\/p>\n

65. J.L. Freeouf, J.M. Woodall. Appl. Phys. Lett. 39(9), 727-729, 1981. https:\/\/doi.org\/10.1063\/1.92863<\/a><\/p>\n

66. V.A. Gergel, R.A. Suris. ZhETF 84(2), 719-736, 1983.* https:\/\/doi.org\/10.1378\/chest.84.6.71<\/a><\/p>\n

67. C. Tejedor, F. Flores, E. Louis. J. Phys. C: Solid State Phys. 110(12), 2163-2177, 977.<\/p>\n

67. C. Tejedor, F. Flores, E. Louis. J. Phys. C: Solid State Phys. 110(12), 2163-2177, 977.<\/p>\n

68. J.C. Inkson, J. Phys. C: Solid State Phys. 6(8), 1350-1362, 1973. https:\/\/doi.org\/10.1088\/0022-3719\/6\/8\/004<\/a><\/p>\n

69. J.C. Phillips. Sol. State Commun. 12(9), 861-864, 1973. https:\/\/doi.org\/10.1016\/0038-1098<\/a>(73)90095-1<\/p>\n

70. L.J. Brillson. Phys. Rev. Lett. 40(4), 260-263, 1978. https:\/\/doi.org\/10.1103\/PhysRevLett.40.260<\/a><\/p>\n

71. Murray S. Daw, D.L. Smith. Phys. Rev. B 20(12), 5150-5156, 1979. https:\/\/doi.org\/10.1103\/PhysRevB.20.5150<\/a><\/p>\n

72. J.M. Woodall, G.D. Pettit, T.N. Jackson, C. Lanza, K.L. Kavanagh, J.W. Mayer. Phys. Rev. Lett. 51(19), 1783-1786, 1983. https:\/\/doi.org\/10.1103\/PhysRevLett.51.1783<\/a><\/p>\n

73. R.E. Allen, J.D. Dow. JVST 19(3), 383-387, 1981. https:\/\/doi.org\/10.1116\/1.571068<\/a><\/p>\n

74. A. Zunger. Phys. Rev. B 24(8), 4372-4391, 1981. https:\/\/doi.org\/10.1103\/PhysRevB.24.4372<\/a><\/p>\n

75. A. Hiraki, K. Shuto, S. Kim, W. Kamimura, W. Iwami. Appl. Phys. Lett. 31(9), 611-612, 1977. https:\/\/doi.org\/10.1063\/1.89799<\/a><\/p>\n

76. L.J. Brillson. Phys. Rev. B 18(6), 2431-2446, 1978. https:\/\/doi.org\/10.1103\/PhysRevB.18.2431<\/a><\/p>\n

\u00a077. L.J. Brillson. Surf. Sci. 168(1-3), 260-274, 1986.https:\/\/doi.org\/10.1016\/0039-6028<\/a>(86)90856-3<\/p>\n

78. C.A. Mead. Appl. Phys. Lett. 6(6), 103-104, 1965. https:\/\/doi.org\/10.1063\/1.1754185<\/a><\/p>\n

79. S.G. Louie, M.L. \u0421ohen. Phys. Rev. B 13(6), 2461-2469, 1976. https:\/\/doi.org\/10.1103\/PhysRevB.13.2461<\/a><\/p>\n

80. J. Tersoff. JVST B 4(4), 1066-1067, 1986. https:\/\/doi.org\/10.1116\/1.583543<\/a><\/p>\n

81. W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, I. Lindau. JVST 16(5), 1422-1433, 1979. https:\/\/doi.org\/10.1116\/1.570215<\/a><\/p>\n

82. R. Van de Walle, R.L. Van Meirhaeghe, W.H. Laflere, F. Cardon. J. Appl. Phys. 74(3), 1885- 1889, 1993. https:\/\/doi.org\/10.1063\/1.354797<\/a><\/p>\n

83. O.F. Sankey, R.E. Allen, R. Shang-Fen, J.D. Dow. JVST B 3(4), 1162-1166, 1985.<\/p>\n

84. I.B. Ermolovich, R.V. Konakova, V.V. Milenin, A.N. Primenko, I.V. Prokopenko. FTP 31(4), 503-508, 1997.* https:\/\/doi.org\/10.1134\/1.1187177<\/a><\/p>\n

85. S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappell, G.D. Pettit. Appl. Phys. Lett. 48(7), 475-477, 1986. https:\/\/doi.org\/10.1063\/1.96535<\/a><\/p>\n

86. A.P. Vyatkin, N.K. Maksimova. Izv. Vuzov. Fizika no 10, 96-108, 1983.*<\/p>\n

87. H. Hasegawa, T. Sawada. Thin Solid Films 103(1), 119-140, 1983. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(83)90430-3<\/p>\n

88. H. Hasegawa, H. Ohno, T. Sawada. Jap. J. Appl. Phys. 25(4), L265-L268, 1986. https:\/\/doi.org\/10.1143\/JJAP.25.L265<\/a><\/p>\n

89. H. Hasegawa, H. Ohno. JVST 34(4), 1130-1138, 1986. https:\/\/doi.org\/10.1103\/PhysRevB.34.1130<\/a><\/p>\n

90. S.D. Mukherjee, D.V. Morgan, C.J. Palmstron, J.G. Smith. JVST 17(5), 904-910, 1980. https:\/\/doi.org\/10.1116\/1.570614<\/a><\/p>\n

91. R. Pretorius, J.M. Harris, M.-A. Nicolet. Sol. State Electron. 21(4), 667-675, 1978. https:\/\/doi.org\/10.1016\/0038-1101(78)90335-0<\/a><\/p>\n

92. V.V. Milenin, V.G. Lyapin, A.A. Naumovets. ZhTF 65(8), 90-97, 1995.*<\/p>\n

93. A.P. Vyatkin, V.I. Kravtson, L.M. Krasil’nikova, N.K. Maksimova, P.V. Panasenko, A.G. Pozdnyakov, V.I. Filatov. EP no 3, 44-46, 1990.*<\/p>\n

94. T. Lalinsky, D. Gregu\u0161eva, \u017d. Morozova, J. Breza, P. Vogrin\u010di\u010d. Appl. Phys. Lett. 64(14), 1818-1820, 1994. https:\/\/doi.org\/10.1063\/1.111988<\/a><\/p>\n

95. M.-A. Nikolet. Thin Solid Films 52(3), 415-443, 1978. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(78)90184-0<\/p>\n

96. M.-A. Nicolet, M. Bartur. JVST 19(3), 786-793, 1981. https:\/\/doi.org\/10.1116\/1.571149<\/a><\/p>\n

97. D.V. Morgan, H. Thomas, W.T. Anderson, P. Thompson, A. Christou, D.J. Diskett. Phys. Stat. Sol. (a) 110(2), 531-536, 1988. https:\/\/doi.org\/10.1002\/pssa.2211100226<\/a><\/p>\n

98. L.C. Zhang, S.R. Cheng, C.L. Liand, H.W. Cheung. Appl. Phys. Lett. 50(8), 445-447, 1987.<\/p>\n

https:\/\/doi.org\/10.1063\/1.98169<\/a><\/p>\n

99. Kin Man Yu., J.M. Jaklevic, E.E. Haller, S.K. Cheung, P.S. Kwok. J. Appl. Phys. 64(3), 1284- 1291, 1988. https:\/\/doi.org\/10.1063\/1.341847<\/a><\/p>\n

100. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, V.A. Pilipenko. Interstitial Phases in the Technology of Semiconductor Devices and VLSI, NTK “Institute for Single Crystals”, Kharkov, 2008.*<\/p>\n

101. L.A. Dvorina. In: Refractory Compounds in Microelectronics, 4-14, IPM, Kiev, 1996.*<\/p>\n

102. L.A. Seidman. OET Ser. 2, no 6(1366), 1988.*<\/p>\n

103. N.K. Maksimova, V.M. Kalygina, V.P. Voronkov, A.P. Vyatkin. Izv. Vuzov. Fizika no 10, 52-62,<\/p>\n

104. M. Guziewicz, A. Piotrowska, E. Kaminska, K. Goldszewska, A. Turos, E. Mizera, A. Winiarski, J. Szade. Sol. State Electron. 43(6), 1055-1061, 1999. https:\/\/doi.org\/10.1016\/S0038-1101<\/a>(99)00024-6<\/p>\n

105. Wan-rong Zhang, Zhi-guo Li, Fu-Chen Mu, Ying-Hua Sun, Yao-hai Cheng, Jian-xin Chen, Guang-Di Shen. Sol. State Electron. 45(7), 1183-1187, 2001.<\/p>\n

106. H.C. Chen, B.H. Tseng, M.P. Houng, Y.H. Wang. Thin Solid Films 445(1), 112-117, 2003. https:\/\/doi.org\/10.1016\/S0040-6090<\/a>(03)01237-9<\/p>\n

107. A. Kuchuk, E. Kaminska, A. Piotrovska, K. Golazewska, E. Dynowska, O.S. Lytvyn, L. Nowicki, R. Ratajczak. Thin Solid Films 459(1-2), 292-296, 2004. https:\/\/doi.org\/10.1016\/j.tsf.2003.12.137<\/a><\/p>\n

108. D.C. Houghton. Thin Films and Interfaces 25, 149-156, 1983.<\/p>\n

109. Mayumi Takeyama, Atsushi Noya, Touko Sase, Akira Ohta. JVST B 14(2), 674-678, 1996.<\/p>\n

110. A.V. Kuchuk. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP, Kiev, 2006.*<\/p>\n

110. A.V. Kuchuk. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP, Kiev, 2006.*<\/p>\n

111. N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, I.N. Arsent’ev, A.V. Bobyl, P.N. Brunkov, I.S. Tarasov, \u0410.\u0410. Tonkikh, V.P. Ulin, \u041c. Ustinov, G.E. Tsirlin. FTP 40(6), 753-757, 2006.* https:\/\/doi.org\/10.1134\/S1063782606060200<\/a><\/p>\n

112. M. Guziewicz. Ph. D. Thesis. Proc. ITE no 1-3, 1-70, 2001 (in Polish).<\/p>\n

113. A.V. Kuchuk, V.P. Kladko, V.F. Machulin, A. Piotrovska, E. Kaminska, K. Golaszewska, R. Ratajczak, R. Minikayev. Rev. Adv. Mater. Sci. 8(1), 22-26, 2004.<\/p>\n

114. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin. SQO 3(3), 359-370, 2000.<\/p>\n

115. V.V. Milenin, R.V. Konakova, V.N. Ivanov, G.K. Beketov, V.I. Poludin, I.B. Ermolovich. ZhTF 70(11), 80-85, 2000.*<\/p>\n

116. E.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, V.N. Ivanov, D.I. Voitsikhovskyi. FTP 33(8), 948-953, 1999.* https:\/\/doi.org\/10.1134\/1.1187800<\/a><\/p>\n

Chapter 3<\/p>\n

1. G.V. Milenin, A.V. Bakuntsev. Tekhnika Sredstv Svyazi, Ser. Tekhnika Radioveschatel’nogo Priema i Akustiki, no 2, 45-51, 1989.*<\/p>\n

2. A.V. Bakuntsev, G.V. Milenin. Dielektriki i Poluprovodniki, no 33, 88-94, 1988.*<\/p>\n

3. L.G. Dubitskii. ET Ser. 8, no 7(85), 11-34, 1980.*<\/p>\n

4. V.L. Vorobiev. Thermodynamic Foundations of Diagnostics and Reliability of Microelectronic Facilities, Nauka, Moscow, 1989.*<\/p>\n

5. R. Haase, Thermodynamics of Irreversible Processes, Dover Publications, New York, 1990.<\/p>\n

6. \u0410.\u0410. Predvoditelev, N.A. Tyapunina, G.I. Zinenkova, G.V. Bushueva. Physics of Crystals with Defects, MGU, Moscow, 1986.*<\/p>\n

7. Physical Basis of IC Reliability (ed. Yu.G. Miller), Sovetskoe Radio, Moscow, 1976.*<\/p>\n

8. E.I. Efimov, I.G. Kalman, V.I. Martynov. Reliability of Solid ICs, Izd. Standartov, Moscow, 1979.*<\/p>\n

9. \u0410.\u0410. Chernyshev. The Foundations of Reliability of Semiconductor Devices and ICs, Radio i Svyaz’, Moscow, 1988.*<\/p>\n

10. V.I. Fistul. Decomposition of Supersaturated Semiconductor Solid Solutions, Metallurgiya, Moscow, 1977.*<\/p>\n

11. V.I. Strikha, E.V. Buzaneva. Physical Foundations of the Metal\u2212Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz’, Moscow, 1987.*<\/p>\n

12. F.S. Shishiyanu. Diffusion and Degradation in Semiconductor Materials and Devices, Shtiintsa, Kishinev, 1978.*<\/p>\n

13. R.V. Konakova, P. Kordo\u0161, Yu.A. Tkhorik, V.I. Faynberg, F. \u0160tofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986.<\/p>\n

14. Yu.A. Tkhorik, L.S. Khazan. Plastic Deformation and Misfit Dislocations in Heteroepitaxial Systems, Naukova Dumka, Kiev, 1983.*<\/p>\n

15. K.A. Baliev, V.N. Dyagilev, V.I. Lebedev, A.V. Lubashevskii. Micropower ICs, Sovetskoe Radio, Moscow, 1975.*<\/p>\n

16. Silicon Nitride in Electronics (ed. A.V. Rzhanov), Nauka, Novosibirsk, 1982.*<\/p>\n

17. I.M. Melamedov. Physical Basis of Reliability, Energiya, Leningrad, 1970.*<\/p>\n

18. V.M. Bardin. Reliability of Semiconductor Power Devices, Energiya, Moscow, 1978.*<\/p>\n

19. O.A. Kuznetsov, A.I. Pogalov, V.S. Sergeev. Strength of the Elements of Microelectronic Equipment, Radio i Svyaz’, Moscow, 1990.*<\/p>\n

20. L.G. Dubitskii. Forerunners of Failures in the Electronic Products, Radio i Svyaz’, Moscow, 1989.*<\/p>\n

21. V.N. Deynego, G.V. Milenin. Electronnoe Modelirovanie 16(2), 55-57, 1994.* https:\/\/doi.org\/10.2307\/3378583<\/a><\/p>\n

22. G.V. Milenin. Electronnoe Modelirovanie 18(1), 59-61, 1996.*<\/p>\n

23. G. Nicolis, I. Prigogine. Self-Organization in Nonequilibrium Systems: From Dissipative Structures to Order through Fluctuations, Wiley, New York, 1977.<\/p>\n

24. G. Nicolis, I. Prigogine. Exploring Complexity, Freeman and Co, New York, 1989.<\/p>\n

25. V.V. Bolotin. The Methods of Probability Theory and Reliability Theory in Analysis of Structure, Stroyizdat, Moscow, 1982.*<\/p>\n

26. J.M.T. Thompson. Instabilities and Catastrophes in Science and Engineering, Wiley, New York, 1982.<\/p>\n

27. V.Z. Parton. Fracture Mechanics: From Theory to Practice, Gordon and Breach, Philadelphia, 1992.<\/p>\n

28. D. Broek. Elementary Engineering Fracture Mechanics, Martinus Nijhoff Publishers, Boston\u2212The Hague\u2212Dordrecht\u2212Lancaster, 1982. https:\/\/doi.org\/10.1007\/978-94-011-9055-8<\/a><\/p>\n

29. J.A. Collins. Failure of Materials in Mechanical Design: Analysis, Prediction, Prevention, 2nd Edition, Wiley, New York, 1993.<\/p>\n

30. J.F. Knott. Fundamentals of Fracture Mechanics, John Wiley – Halsted Press, New York, 1973.<\/p>\n

31. Yu.A. Kontsevoi, Yu.M. Litvinov, E.A. Fattakhov. Plasticity and Strength of Semiconductor Materials and Structures, Radio i Svyaz’, Moscow, 1982.*<\/p>\n

32. V.S. Zolotarevskii. Mechanical Properties of Metals, Metallurgiya, Moscow, 1983.*<\/p>\n

33. V.R. Regel, A.I. Slutsker, E.E. E.Tomashevskii. Kinetic Nature of Strength of Solids, Nauka, Moscow, 1974.*<\/p>\n

34. G.M. Bartenev, Yu.V. Zelenev. Physics and Mechanics of Polymers, Vysshaya Shkola, Moscow, 1983.*<\/p>\n

35. I.M. Dubrovskii, B.V. Egorov, K.P. Ryaboshapka. Physics Handbook, Naukova Dumka, Kiev, 1986.*<\/p>\n

36. Nonlinear Effects and Kinetics of Fracture (Subject Collection of Scientific Transactions), Leningrad, 1988.*<\/p>\n

37. G.I. Skanavi. Physics of Dielectrics. High Fields Region, GIFML, Moscow, 1958.*<\/p>\n

38. V.S. Dmitrievskii. Calculation and Design of Electrical Insulation, Energoizdat, Moscow, 1981.*<\/p>\n

39. G.S. Kuchinskii. Partial Discharges in High-Voltage Structures, Energiya, Leningrad, 1979.*<\/p>\n

40. V.Ya. Ushakov. Electrical Aging and Resources of Monolithic Polymer Insulation, Energoatomizdat, Moscow, 1988.*<\/p>\n

41. \u0410.\u0410. Vorobiev, E.K. Zavadovskaya. Electric Strength of Solid Dielectrics, GIFML, Moscow, 1956.*<\/p>\n

42. \u0410.\u0410. Vorobiev, G.A. Vorobiev. Electrical Breakdown and Disruption of Solid Dielectrics, Vysshaya Shkola, Moscow, 1966.*<\/p>\n

43. Yu.A. Kontsevoi, S.P. Miroshnikov, R.R. Rezvyi, V.P. Solntseva. ET Ser. 2, no 4(47), 165-177, 1969.*<\/p>\n

44. Silicon Planar Transistors (ed. Ya.A. Fedotov), Sovetskoe Radio, Moscow, 1973.*<\/p>\n

45. V.I. Nikishin, B.K. Petrov, V.F. Synorov, V.S. Gorokhov, V.V. Bachurin, V.V. Asessorov. Design and Manufacturing Technology for Power Microwave Transistors, Radio i Svyaz’, Moscow, 1989.*<\/p>\n

46. V.N. Deynego, G.V. Milenin. Electronnoe Modelirovanie 16(1), 15-18, 1994.*<\/p>\n

47. Yu.M. Poplavko. Physics of Dielectrics, Vyscha Shkola, Kiev, 1989.*<\/p>\n

48. A.M. Nechaev, V.F. Sinkevich. ET Ser. 2, no 2(161), 45-54, 1983.*<\/p>\n

49. A.M. Nechaev, E.A. Rubakha, V.F. Sinkevich. RE 26(8), 1773-1782, 1981.*<\/p>\n

50. K.V. Shalimova. Physics of Semiconductors, Energiya, Moscow, 1976.*<\/p>\n

51. I.M. Vikulin, V.I. Stafeev. Physics of Semiconductor Devices, Radio i Svyaz’, Moscow, 1990.*<\/p>\n

52. V.V. Pasynkov, L.K. Chirkin, A.D. Shinkov. Semiconductor Devices, Vysshaya Shkola, Moscow,\u00a0 1981.*<\/p>\n

Chapter 4<\/p>\n

1. H. Egawa. IEEE Trans. Electron Devices ED-13(11), 754-758, 1966. https:\/\/doi.org\/10.1109\/T-ED.1966.15838<\/a><\/p>\n

\u00a0 2. H.C. Bowers. IEEE Trans. Electron Devices ED-15(6), 343-350, 1968. https:\/\/doi.org\/10.1109\/T-ED.1968.16189<\/a><\/p>\n

3. M.W. Muller, H.G. Guckel. IEEE Trans. Electron Devices 15, 560, 1968. https:\/\/doi.org\/10.1109\/T-ED.1968.16403<\/a><\/p>\n

4. I.V. Grekhov, Ye.N. Serezhkin. Avalanche Breakdown of the p-n Junction in Semiconductors. Energiya, Leningrad, 1980*.<\/p>\n

5. A.S. Tager, V.M. Val’d-Perlov. Avalanche Diodes and Their Application in the UHF Technique, Sovetskoe Radio, Moscow, 1968*.<\/p>\n

6. R.V. Konakova, Yu.S. Melnikova, E.V. Mozdor, V.I. Faynberg. FTP 22(10), 1754-1758, 1988.*<\/p>\n

7. R.V. Konakova, Yu.S. Melnikova, E.V. Mozdor, V.I. Faynberg. Phys. Stat. Sol. (a) 113, 215- 221, 1989. https:\/\/doi.org\/10.1002\/pssa.2211130126<\/a><\/p>\n

8. G.E. Stilman, V.M. Robbins, K. Hess. Physica B134, 241, 1980. https:\/\/doi.org\/10.1016\/0378-4363<\/a>(85)90348-1<\/p>\n

9. B.T. Dai, C.V. Chasg. J. Appl. Phys. 42, 5198, 1971. https:\/\/doi.org\/10.1063\/1.1659922<\/a><\/p>\n

10. R. Van Overstraeten, H. De Man. Sol. State Electron. 13(5), 583-608, 1973. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(70)90139-5<\/p>\n

11. B.I. Boltaks. Diffusion in Semiconductors. Fizmatgiz, Moscow, 1961.*<\/p>\n

12. V.I. Faynberg. PTM no 32, 49-53, 1980.* https:\/\/doi.org\/10.1353\/boc.1980.0031<\/a><\/p>\n

13. S.M. Sze, R.M. Ryder. Proc. IEEE 59, 1140, 1971. https:\/\/doi.org\/10.1109\/PROC.1971.8360<\/a><\/p>\n

14. R.A. Giblin. Electronics Lett. 4(3), 52-54, 1968. https:\/\/doi.org\/10.1049\/el:19680042<\/a><\/p>\n

15. M.W. Muller. Appl. Phys. Lett. 12(6), 218-219, 1968. https:\/\/doi.org\/10.1063\/1.1651960<\/a><\/p>\n

16. M.W. Muller. IEEE Trans. Electron. Devices 15, 510, 1968. https:\/\/doi.org\/10.1109\/T-ED.1968.16413<\/a><\/p>\n

17. A.W. Garlson. Proc. IEEE 57(3), 351-354, 1969. https:\/\/doi.org\/10.1109\/PROC.1969.6975<\/a><\/p>\n

18. I.L. Zaizevskii, R.V. Konakova, Yu.A. Tkhorik, V.I. Shakhovtsov. Phys. Stat. Sol. 53(2), K153- K156, 1972. https:\/\/doi.org\/10.1002\/pssa.2210530246<\/a><\/p>\n

19. W.J. Ewans, D.I. Scharfetter, R.L. Johnston, R.L. Kev. J. Appl. Phys. 42(2), 799-803, 1971. https:\/\/doi.org\/10.1063\/1.1660096<\/a><\/p>\n

20. B. Hofflinger. IEEE Trans. Electron. Devices ED-13(1), 151-158, 1966. https:\/\/doi.org\/10.1109\/T-ED.1966.15650<\/a><\/p>\n

21. J.B. Gunn. In: Progress in Semiconductors 2 (ed. A.F. Grasos), Heywood, London, 1957.<\/p>\n

22. T.Ya. Puritis, I.E. Ozolinya, R.Ya. Krike, Ya.P. Murans, Ya.K. Balodis. In: Physics of p-n Junctions, 383-390, Zinatne, Riga, 1966.*.<\/p>\n

23. A.W. Garlson. Proc. IEEE 56(7), 1228-1229, 1968. https:\/\/doi.org\/10.1109\/PROC.1968.6533<\/a><\/p>\n

24. B.K. Petroff. RE 21, 2365, 1976.*<\/p>\n

25. A.V. Kardo-Sysoev, E.A. Pasutis, I.G. Tchashnikov. FTP 10, 1486, 1976.*.<\/p>\n

26. R.V. Konakova, V.I. Faynberg, M.Yu. Filatov. UFZh 25(9), 1563-1565, 1980.*<\/p>\n

27. Yu.R. Nosov. Semiconductor Pulse Diodes, Sovetskoe Radio, Moscow, 1965.*<\/p>\n

28. V.K. Aladinski, V.I. Dashin, A.S. Sushik, A.M. Timerbulator. RE 18, 342, 1973.*<\/p>\n

29. R.V. Konakova, V.I. Faynberg, M.Yu. Filatov. PTM no 34, 41-42, 1981.*<\/p>\n

30. V.I. Faynberg, R.V. Konakova, L.V. Scherbina, N.S. Boltovets. Phys. Stat. Sol. (a) 68, 39-43, 1981. https:\/\/doi.org\/10.1002\/pssa.2210680105<\/a><\/p>\n

31. R.V. Konakova, P. Kordo\u0161, Yu.A. Tkhorik, V.I. Faynberg, F. \u0160tofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986.*<\/p>\n

32. V.I. Faynberg. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis. IP AN UkrSSR, Kiev, 1988.*<\/p>\n

33. R.V. Konakova, V.V. Rybalka, L.V. Scherbina, I.L. Zaitsevskii. Sol. State Electron. 27(4), 381- 383, 1984. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(84)90172-2<\/p>\n

34. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*<\/p>\n

35. L.V. Scherbina. Author’s Synopsis of the Candidate of Tech. Sci. Thesis. IP AN UkrSSR, Kiev, 1991.*<\/p>\n

Chapter 5<\/p>\n

1. A.M. Assour, J. Murr, D. Tarangioli. R.C.A. Rev. 31(9), 499-516, 1970.<\/p>\n

2. V.F. Afanasovich, V.N. Vasilevskaya, N.S. Boltovets, R.V. Konakova, I.A. Mal’tseva, V.V. Rybalka, L.M. Suvorova, L.\u0410. Khomenko. PTM no 15, 42-44, 1974.*<\/p>\n

3. Z.A. Iskander-zadeh, Yu.G. Miller, S.G. Rzaev, E.A. Jafarov, M.R. Akhundov. Izv. AN AzSSR. Ser. Phys.-Tech. and Math. Nauk no 4, 76-83, 1977.*<\/p>\n

4. Yu.\u0410. Evseev, I.N. Magden, A.E. Radechko, V.\u0415. Chelnokov. FTP 4(8), 1432-1436, 1970.*<\/p>\n

5. C. Donolato, P.G. Merli, I. Vecchi. J. Electrochem. Soc. 124(3), 473-474, 1977. https:\/\/doi.org\/10.1149\/1.2133330<\/a><\/p>\n

6. H.F. John. Proc IEEE 55(8), 1249-1271, 1967. https:\/\/doi.org\/10.1109\/PROC.1967.5827<\/a><\/p>\n

7. W. Shockley. Sol. State Electron. 2(1), 35-67, 1961. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(61)90054-5<\/p>\n

8. V.V. Batavin. FTP 4(4), 760-763, 1970.*<\/p>\n

9. L.G. Dubitskii. Forerunners of Failures in the Electronic Products, Radio i Svyaz’, Moscow, 1989.*<\/p>\n

10. W. Shockley. Czech. J. Phys. B11, 81-121, 1961. https:\/\/doi.org\/10.1007\/BF01688613<\/a><\/p>\n

11. C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek. Proc. IEEE 62(2), 149-168, 1974. https:\/\/doi.org\/10.1109\/PROC.1974.9406<\/a><\/p>\n

12. N.V. Bogach, V.A. Gusev, P.G. Litovchenko. PTM no 34, 3-20, 1981.*<\/p>\n

13. J.E. Lawrence. Solid State Technology 19(8), 50-54, 1975.<\/p>\n

14. S. Prussin. Solid State Technology 19(8), 58- 60, 1975.<\/p>\n

15. C.J. Varker. Solid State Technology 19(8), 60-63, 1975.<\/p>\n

16. V.M. Kiriyanova, A.N. Makovii, M.I. Shevelev. In: Problems of Microelectronics, 85-90, Naukova Dumka, Kiev, 1971.*<\/p>\n

17. J. Kowar, A. Zielinski. In: Proc. 6th Colloquium on Microwave Communication.-Budapest, 1978. 1. – P. II-3\/181 – II-3\/186.<\/p>\n

18. V.S. Andreev. Elektrosvyaz’ no 11, 38-48, 1974.* https:\/\/doi.org\/10.1002\/j.2161-1920.1974.tb00329.x<\/a><\/p>\n

19. P.I. Baransky, V.P. Klochkov, I.V. Potykevich. Semiconductor Electronics: A Handbook. Naukova Dumka, Kiev, 1975.*<\/p>\n

20. O. Madelung. Physics of III\u2212V Compounds. John Wiley and Sons, Inc., New York\u2212London\u2212Sydney, 1964.<\/p>\n

21. S.S. Strel’chenko, V.V. Lebedev. III\u2212V Compounds: A Handbook. Metallurgiya, Moscow, 1984.*<\/p>\n

22. L. Pauling. General Chemistry, Freeman, San Francisco, 1970.<\/p>\n

23. K.V. Ravy. Defects and Impurities in Semiconducting Silicon, Wiley, New York, 1981.<\/p>\n

24. M.G. Milvidskii, V.B. Osvenskii. Structural Defects in Epitaxial Layers of Semiconductors, Metallurgiya, Moscow, 1985.*<\/p>\n

25. Yu.A. Kontsevoi, Yu.M. Litvinov, E.A. Fattakhov. Plasticity and Strength of Semiconductor Materials and Structures, Radio i Svyaz’, Moscow, 1982.*<\/p>\n

26. M.I. Gorlov, V.A. Emelyanov, A.V. Strogonov. Gerontology of Silicon ICs, Nauka, Moscow, 2004.*<\/p>\n

27. N.S. Boltovets, V.N. Vasilevskaya, L.I. Datsenko, R.V. Konakova, E.N. Kislovskii, L.M. Suvorova. In: Structure Defects in Semiconductors, 149-152, IFP SO AN SSSR, Novosibirsk, 1973.*<\/p>\n

28. N.S. Boltovets, V.N. Vasilevskaya, R.V. Konakova, L.M. Suvorova. PTM no 15, 42-45, 1973.*<\/p>\n

29. D.I. Rose. Phys. Rev. 105(2), 413-418, 1957. https:\/\/doi.org\/10.1103\/PhysRev.105.413<\/a><\/p>\n

30. S.Yu. Buslaev, Yu.S. Kleinfeld, V.F. Sinkevich. ET Ser. 2 no 5, 76-84, 1984.*<\/p>\n

31. A.L. Polyakova. Deformation of Semiconductors and Semiconductor Devices, Energiya, Moscow, 1979.*<\/p>\n

32. I.N. Magden, V.A. Safonov, B.L. Meiler. ET Ser. 2 no 4 (114), 42-47, 1977.*<\/p>\n

33. R. Stickler, I.W. Faust. Electrochem. Techn. 4(1), 70-71, 1966.<\/p>\n

34. L.V. Scherbina. Author’s Synopsis of the Candidate of Tech. Sci. Thesis. IP AN UkrSSR, Kiev, 1991.*<\/p>\n

35. A.M. Svetlichnyi, V.G. Klindukhov. FTP 14(11), 2113-2116, 1980.*<\/p>\n

36. H. Kressel. R.C.A. Rev. 28(2), 175-207 1967. https:\/\/doi.org\/10.2307\/2105279<\/a><\/p>\n

37. V.I. Grekhov, Yu.N. Serezhkin. Avalanche Breakdown of p-n Junction in Semiconductors, Energiya, Leningrad, 1980.*<\/p>\n

38. V.A. Marasanov, Yu.I. Pashintsev. FTP 1(8), 1214-1217, 1967.*<\/p>\n

39. G.S. Agalarzadeh, A.I. Petrin, \u0421.\u041e. Izidinov. Fundamentals of Design and Processing Technology for p-n Junction Surface, Sovetskoe Radio, Moscow, 1978.*<\/p>\n

40. A.G. Milnes. Deep Impurities in Semiconductors, Wiley-Interscience, New York, 1973.<\/p>\n

41. A. Coetzberger, W. Shockley. J. Appl. Phys. 31(10), 1821-1824, 1960. https:\/\/doi.org\/10.1063\/1.1735455<\/a><\/p>\n

42. I.N. Magden. ET Ser. 2 no 2(94), 88-90, 1975.*<\/p>\n

43. A.S. Tager, V.M. Val’d-Perlov. Avalanche Diodes and Their Application in the UHF Technique. Sovetskoe Radio, Moscow, 1968.*<\/p>\n

44. T.Ya. Puritis, I.E. Ozolinya, R.Ya. Krike, Ya.P. Murans, Ya.K. Balodis. In: Physics of p-n Junctions, 383-390, Zinatne, Riga, 1966.*<\/p>\n

45. V.V. Batavin, G.V. Popova, L.A. Batavina. FTT 8(8), 2502-2504, 1966.*<\/p>\n

46. J.E. Carroll. Hot Electron Microwave Generators. Edward Arnold Publ., London, 1970.<\/p>\n

47. R.V. Konakova, P. Kordo\u0161, Yu.A. Tkhorik, V.I. Faynberg, F. \u0160tofanik. Reliability Prediction for the Semiconductor Avalanche Diodes. Naukova Dumka, Kiev, 1986*.<\/p>\n

48. Yu.A. Evseev. Semiconductor Devices for Power High-Voltage Converter Installations, Energiya, Moscow, 1978.*<\/p>\n

49. V.\u0415. Chelnokov, Yu.\u0410. Evseev. Physical Basis for Operation of Power Semiconductor Devices, Energiya, Moscow, 1973.*<\/p>\n

50. T.W. Coolns. Proc. IEEE 57(3), 351-354, 1969. https:\/\/doi.org\/10.1109\/PROC.1969.6975<\/a><\/p>\n

51. R.V. Konakova, N.A. Prima, E.A. Soloviev. In: Proc. 8th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 1, 392-394, Veber, 1998.*<\/p>\n

52. N.A. Prima, E.A. Soloviev, N.S. Boltovets. In: Proc. 9th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 87-88, Veber, 1999.*<\/p>\n

53. N.S. Boltovets, V.V. Basanets, A.M. Kurakin, E.F. Venger, R.V. Konakova, V.V. Milenin, E.A. Soloviev. In: Proc. 10th Intern. Conf. “Microwave and Telecommunication Technology”, Sevastopol, 139-140, Veber, 2000.*<\/p>\n

54. A.E. Belyaev, R.V. Konakova, V.V. Milenin, E.A. Soloviev, D.I. Voitsikhovskyi, N.S. Boltovets, V.V. Basanets, V.A. Krivutsa, V.F. Mitin. Rom. J. Inform. Sci. and Technol. 3(1), 5-15, 2000.<\/p>\n

55. B.S. Kerner, V.V. Osipov. Autosolitons. Localized Highly Nonequilibrium Regions in the Uniform Dissipative Systems, Nauka, Moscow, 1991.*<\/p>\n

56. V.V. Gafiychuk, B.I. Datsko, B.S. Kerner, V.V. Osipov. FTP 24(4), 724-730, 1990.*<\/p>\n

57. V.A. Vaschenko, B.S. Kerner, V.V. Osipov, V.F. Sinkevich. FTP 24(10), 1705-1707, 1990.*<\/p>\n

58. V.V. Gafiychuk, B.I. Datsko, B.S. Kerner, V.V. Osipov. FTP 24, 1282-1290, 1990.*<\/p>\n

59. Physical Quantities: A Handbook (eds. I.S. Grigoriev, E.Z. Meylikhov), Energoatomizdat, Moscow, 1991.*<\/p>\n

60. Yu.K. Pozhela. Plasma and Current Instabilities in Semiconductors, Nauka, Moscow, 1977.*<\/p>\n

61. H.A. Shafft. Proc. IEEE 55, 1272, 1967. https:\/\/doi.org\/10.1109\/PROC.1967.5828<\/a><\/p>\n

62. H. Melchior, M.J.O. Strutt. Proc. IEEE 52(4), 439-440, 1964 https:\/\/doi.org\/10.1109\/PROC.1964.2971<\/a><\/p>\n

63. T.Ya. Puritis, E.V. Pentyush, E.A. Fonav. In: Extension of Operating Temperature Range for Semiconductor Devices, 220-228, Vyscha Shkola, Kiev, 1975.*<\/p>\n

64. R.B. Bendere, R.P. Kalnynya, T.Ya. Puritis. Izv. AN LatvSSR. Ser. Fiz. Techn. no 3, 16-21, 1979.*<\/p>\n

65. A.C. English, H.M. Power. Proc. IEEE ED-13, 500-501, 1966.<\/p>\n

66. V.V. Yudin. ET Ser. 2 no 5, 77-86, 1966.* https:\/\/doi.org\/10.1177\/007327536600500104<\/a><\/p>\n

67. M.G. Milvidskii, V.B. Osvenskii. Structural Defects in Semiconductor Single Crystals, Metallurgiya, Moscow, 1984.*<\/p>\n

68. L.D. Landau, E.M. Lifshits. Theory of Elasticity, Pergamon Press, Oxford, 1986.<\/p>\n

69. A. Dardys, J. Kundrotas. Handbook on Physical Properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers, Vilnius, 1994.<\/p>\n

70. \u0410.\u041a. Shukhostanov. IMPATT Diodes. Physics. Technology. Application, Radio i Svyaz’, Moscow, 1997.*<\/p>\n

71. V.D. Nazarenko, V.I. Tikhonyuk, E.I. Scheglov. ET Ser. 3 no 2 (62), 113-115, 1976.*<\/p>\n

72. I.\u0410. Velichkovskii. OET Ser. 1 no 17 (587), 1978.*<\/p>\n

73. P. Staecker, W.T. Lindley, R.A. Murphy, G.P. Donnelly. In: 12th Annual Proc. Reliability Physics, 1974. Las Vegas, Nevada, 293-297, N.Y.IEEE Edit. Dept., 1974.<\/p>\n

74. K.R. Gleason, E.D. Cohen, M.L. Bark. IEEE Trans. Parts. Hybrids and Packag. PHP-13(4), 344-348, 1977. https:\/\/doi.org\/10.1109\/TPHP.1977.1135220<\/a><\/p>\n

75. H. Goronkin. Sol. State Electron. 18(10), 891-893, 1975. https:\/\/doi.org\/10.1016\/0038-1101<\/a>(75)90016-7<\/p>\n

76. R.C. Pittetti. In: 10th Annual Proc. Reliability Physics, 1972. Las Vegas, Nevada, 171-174, N.Y., 1972.<\/p>\n

77. S.D. Mukherjee, D.V. Morgan, M.J. Hawes. J. Electrochem. Soc. 126(6), 1047-1053, 1979. https:\/\/doi.org\/10.1149\/1.2129172<\/a><\/p>\n

78. T.A. Midford, R.L. Bernick. IEEE Trans. Microwave Theory and Techn. MTT-27(5), 482-492, 1979. https:\/\/doi.org\/10.1109\/TMTT.1979.1129653<\/a><\/p>\n

79. J.W. Gewartowski. IEEE Trans. Microwave Theory and Techn. MTT-27(5), 434-442, 1979. https:\/\/doi.org\/10.1109\/TMTT.1979.1129645<\/a><\/p>\n

80. M.-A. Nicolet. Thin Solid Films 52, 415-443, 1978. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(78)90184-0<\/p>\n

81. L.\u0410. Seidman. OET Ser. 2 no 6(1366), 1988.*<\/p>\n

82. J.E. Sundgren. Thin Solid Films 22(2), 21-44, 1985. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(85)90333-5<\/p>\n

83. G. Lemperiere, J.M. Poitevin. Thin Solid Films 111(2), 339-349, 1984. https:\/\/doi.org\/10.1016\/0040-6090<\/a>(84)90326-2<\/p>\n

84. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskii. Techn. Phys. 48(4), 441-448, 2003. https:\/\/doi.org\/10.1134\/1.1568486<\/a><\/p>\n

85. \u0410.\u0410. Rusakov. X-ray Investigation of Metals, Atomizdat, Moscow, 1977.*<\/p>\n

86. G.V. Samsonov, K.I. Portnoi. Refractory Compound Alloys, Oborongiz, Moscow, 1961.*<\/p>\n

87. R.B. Kotel’nikov, S.N. Bashlykov, Z.G. Galiakbarov, A.I. Kashtanov. Super-Refractory Elements and Compounds, Metallurgiya, Moscow, 1968.*<\/p>\n

88. S.P. Murarka. Silicides for VLSI Application. Academic Press, New York\u2212London, 1983.<\/p>\n

89. M. Harris, E. Lugujjo, S.U. Campisano. JVST 12(1), 524-527, 1975. https:\/\/doi.org\/10.1116\/1.568580<\/a><\/p>\n

90. O.M. Barabash, Yu.N. Koval. Structure and Properties of Metals and Alloys. Naukova Dumka, Kiev, 1986.*<\/p>\n

91. Thin Films. Interdiffusion and Reactions (eds. J.M. Poate, K.N. Tu, W. Mayer), Wiley, 1978.<\/p>\n

92. R.\u0410. Andrievskii. Uspekhi Khimii 66(1), 57-77, 1997.* https:\/\/doi.org\/10.1070\/RC1997v066n01ABEH000290<\/a><\/p>\n

93. R.\u0410. Andrievskii, A.V. Ragulya. Nanostructure Materials, Academia, Moscow, 2005.*<\/p>\n

94. J. Suni, M. Maenpaa, M.A. Nicolet, M. Luomajaw. J. Electrochem. Soc. 130(5), 1215-1218, 1983. https:\/\/doi.org\/10.1149\/1.2119920<\/a><\/p>\n

95. D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, E.A. Soloviev, \u041c.\u0411. Tagaev, \u041e.D. Smiyan, N.S. Boltovets, N.\u041c. Goncharuk, V.A. Krivutsa, V.\u0415. Chaika. PKOM no 5, 80-84, 1999.*<\/p>\n

96. N.S. Boltovets, D.I. Voitsikhovskyi, \u0410.\u0410. Belyaev, R.V. Konakova, V.V. Milenin. PZhE no 2, 29-36, 2002.*<\/p>\n

97. V.I. Nefedov. X-ray Spectroscopy of Chemical Compounds. A Handbook. Khimiya, Moscow, 1984.*<\/p>\n

98. S. Seal, T. Barr, K. Sobczak, E. Benko. JVST. A15(3), 505-512, 1997. https:\/\/doi.org\/10.1116\/1.580881<\/a><\/p>\n

99. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko. SQO 4(1), 93-105, 2001.<\/p>\n

100. \u0410.\u0410. Chernyshev. The Foundations of Reliability of Semiconductor Devices and ICs, Radio i Svyaz’, Moscow, 1988.*<\/p>\n

101. J. Chem, J.A. Barnard. Material Science and Engineering 191, 233-238, 1995. https:\/\/doi.org\/10.1016\/0921-5093<\/a>(94)09632-7<\/p>\n

102. Th.A. Carlson. Photoelectron and Auger Spectroscopy. Plenum Press, New York and London, 1975. https:\/\/doi.org\/10.1007\/978-1-4757-0118-0<\/a><\/p>\n

103. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi. In: Proc. Third Intern. Euro Conference on Advanced Semicond. Devices and Microsystems. Smolenice Castle, Slovakia, 2000, 441-444.<\/p>\n

104. E.S. Meieran, P.A. Flinn, J.R. Caurruthers. Proc. IEEE 75(7), 908-953, 1987. https:\/\/doi.org\/10.1109\/PROC.1987.13826<\/a><\/p>\n

105. R.M. Waldser, R.W. Benc. Appl. Phys. Lett. 28(10), 624, 1976. https:\/\/doi.org\/10.1063\/1.88590<\/a><\/p>\n

106. A.E. Gershinskii, A.V. Rzhanov, E.I. Cherepov. Poverkhnost’ no 2, 1-12, 1982.*<\/p>\n

107. A.E. Gershinskii, A.V. Rzhanov, E.I. Cherepov. ME 11(2), 83-94, 1982.*<\/p>\n

108. C. Calandra, O. Bisi, G. Ottaviani. Surface. Sci. Repts. 4(5\/6), 271, 1984. https:\/\/doi.org\/10.1016\/0167-5729<\/a>(85)90005-6<\/p>\n

109. K.N. Tu. Appl. Phys. Lett. 27(4), 221, 1975. https:\/\/doi.org\/10.1063\/1.88436<\/a><\/p>\n

110. N.S. Boltovets, G.K. Beketov, A.E. Belyaev, R.V. Konakova, V.V. Milenin, A.I. Senkevich, D.I. Voitsikhovskyi. In: Proc. 23rd Internat. Semiconductor Conf., Sinaia, Romania, 2000, 1, 121-124.<\/p>\n

111. N.S. Davydova, Yu.Z. Danyushevskii. Diode Microwave Oscillators and Amplifier, Radio i Svyaz’, Moscow, 1986.*<\/p>\n

112. M. Ino, T. Makimura, T. Ishibashi, M. Ohmori. Electron. Lett. 115(1), 2-3, 1979.<\/p>\n

113. Yu.Z. Danyushevskii. In: Heat Exchange in Electronic Devices, no 4, 3-15, SGU, Saratov, 1976.*<\/p>\n

114. K. Chino, Y. Wada. Japan. J. Phys. 13(11), 1675-1677, 1974. https:\/\/doi.org\/10.1143\/JJAP.13.1675<\/a><\/p>\n

115. K. Chino, Y. Wada, K. Fukuda. J. Jap. Soc. Appl. Phys. 44, Suppl. 1, 149-156, 1975.<\/p>\n

116. M.Yu. Filatov. Candidate of Tech. Sci. Thesis, IP AN UkrSSR, Kiev, 1989.*<\/p>\n

117. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi. SQO 3(3), 359-370, 2000.<\/p>\n

118. T.T. Rossiter. In: Proc. 11th Annual Reliab. Phys. Conf., Las Vegas. New York, 1973, 275-281.<\/p>\n

119. Diamond in Electronic Engineering (ed. V.B. Kvasnikov), Energoatomizdat, Moscow, 1990.*<\/p>\n

120. C.B. Swan. Proc.IEEE 55, 1617-1618, 1967. https:\/\/doi.org\/10.1109\/PROC.1967.5915<\/a><\/p>\n

121. \u0410.\u0422. Baich. ZRE no 6, 142-148, 1971.*<\/p>\n

122. \u0422.D. Ositinskaya. Sverkhtverdye Materialy no 4, 13-16, 1980.*<\/p>\n

123. E.A. Burgemeister. Physica B 93(2), 165-179, 1978. https:\/\/doi.org\/10.1016\/0378-4363<\/a>(78)90123-7<\/p>\n

124. Physical Properties of Diamonds: A Handbook (ed. N.V. Novikov), Naukova Dumka, Kiev, 1987.*<\/p>\n

125. \u0410.\u041a. Shukhostanov, \u0422.Kh. Akhmetov, S.I. Volkov, A.M. Schekikhachev. OET Ser. 2 no 5, 1990.*<\/p>\n

126. A. Rosen, Ho Pang-Ting, J.B. Klatskin. IEEE Trans. Electron. Dev. 24(2), 159-163, 1977. https:\/\/doi.org\/10.1109\/T-ED.1977.18698<\/a><\/p>\n

127. L.\u041a. Lyubimova. OET Ser. 2 no 3, 1977.*<\/p>\n

128. L.\u0410. Kandidova, S.V. Nosikov, M.Yu. Filatov. ET Ser. 1 no 1 (337), 56-59, 1982.*<\/p>\n

129. \u041e.P. Gludkin. ET Ser. 1 no 2, 59-62, 1977.* https:\/\/doi.org\/10.1080\/10889377709388614<\/a><\/p>\n

130. I.V. Baydalinov. OET Ser. 3 no 1 (174), 1970.*<\/p>\n

131. N.V. Rumak, V.V. Khat’ko. Dielectric Films in Solid-State Microelectronics, Navuka i Tekhnika, Minsk, 1990.*<\/p>\n

132. V.N. Vertoprakhov, B.\u041c. Kuchumov, \u0415.G. Sal’man. Composition and Properties of the Si\u2212SiO2 Structures, Nauka SO, Novosibirsk, 1981.*<\/p>\n

133. R.\u0410. Muminov, V.\u0422. Malaeva, S. Rajanov, U. Sirozhov, B. Sapaev, \u041e.\u041c. Tursunkulov. Poverkhnost’ no 9, 76-80, 1999.*<\/p>\n

134. A.I. Kurnosov. OET Ser. 7 no 13 (292), 1971.* https:\/\/doi.org\/10.1016\/0022-1694<\/a>(71)90241-1<\/p>\n

135. V.K. Severnyi, E.I. Minsker, I.\u0410. Makarenko, N.V. Varlamova, V.A. Semenova. Obmen Opytom v Radiopromyshlennosti no 5, \u0421.20, 1984.*<\/p>\n

136. C.I. Elia. Wall Street J. 22(3), 31-33, 1974<\/p>\n

Chapter 6<\/p>\n

1. \u0410.Ya. Potemkin, I.E. Satsevich. Effect of Thermal Treatment on the Physical Properties of Silicon, ONTI GIREDMET, Moscow, 1962.*<\/p>\n

2. V.G. Litovchenko. Gettering. In: Physics of Solid. An Encyclopaedic Dictionary, 1, 173-174, Naukova Dumka, Kiev, 1996.*<\/p>\n

3. V.N. Mordkovich. ET Ser. 2 no 5 (123), 6 (124), 211-221, 1978.* https:\/\/doi.org\/10.5771\/0943-7444-1978-2-123<\/a><\/p>\n

4. E.I. Verkhovskii. OET Ser. 2 no 8 (838), 1981.*<\/p>\n

5. G.Z. Nemtsov, A.I. Pekarev, Yu.D. Chistyakov, A.N. Burmistrov. ZET no 11, 3-63, 1981.*<\/p>\n

6. N.V. Bogach, V.A. Gusev, P.G. Litovchenko. PTM no 34, 3-20, 1981.*<\/p>\n

7. V.A. Labunov, I.L. Baranov, V.P. Bondarenko, A.M. Dorofeev. ZET no 11, 3-66, 1983.*<\/p>\n

8. N.N. Peresvetov, A.V. Veber, L.\u0410. Petrov. ET Ser. 2 no 10 (102), 80-87, 1975.*<\/p>\n

9. K. Nauka, J. Lagowski, H.C. Gatos, O. Ueda. J. Appl. Phys. 60(2), 615-621, 1986. https:\/\/doi.org\/10.1063\/1.337457<\/a><\/p>\n

10. O. Ueda, K. Nauka, J. Lagowski, H.C. Gatos. J. Appl. Phys. 60(2), 622-626, 1986. https:\/\/doi.org\/10.1063\/1.337458<\/a><\/p>\n

11. V.M. Anischuk, V.A. Gorushko, V.A. Pilipenko, V.N. Ponomar, V.V. Ponaryadov. Physical Basis of Rapid Thermal Treatment. Gettering, Annealing of Ion-Implanted Layers, RTA in the VLSI\u00a0 Technology, BGU, Minsk, 2001.*<\/p>\n

12. V.A. Pilipenko. Rapid Thermal Treatments in the VLSI Technology, BGU, Minsk, 2004.*<\/p>\n

13. K.V. Ravy. Defects and Impurities in Semiconducting Silicon, Wiley, New York, 1981.<\/p>\n

14. G.\u0410. Zelikman, \u0415.Z. Mazel, F.P. Press, S.V. Fronk. Semiconductor Silicon Diodes and Triodes, Energiya, Moscow, 1963.*<\/p>\n

15. Yu.N. Taran, V.Z. Kutsova. In: High-Frequency Metallic and Semiconducting Materials. Proc. 8th Intern. Symposium “High-Frequency Metallic and Semiconducting Materials”, 68-73, NTK MN, Kharkov, 2002.*<\/p>\n

16. R.\u041c. Amalskaya, N.\u0422. Bagraev, L.\u0415. Klyachkin, V.L. Sukhanov. FTP 26(26), 1004-1007, 1992.*<\/p>\n

17. V.F. Strukov, S.S. Khromov, V.I. Astakhov. ME 21(2), 91-93, 1992.*<\/p>\n

18. S.P. Novosyadlyi. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature no 2, 39, 1998.*<\/p>\n

19. \u041a.L. Enisherlova, Yu.\u0410. Kontsevoi, \u041a.V. Belenov, D.V. Donskoi. ET Ser. 2 no 5 (202), 42-49, 1989.*<\/p>\n

20. \u041c.I. Kovalchuk, E.F. Lobanovich, A.N. Petlitskii. ME no 3, 252-255, 1989.*<\/p>\n

21. Author’s Certificate USSR 1753894. \u041c\u041aI \u041d01L21\/322. Kharchenko V.A., Stuk \u0410.\u0410., Smirnov B.V., Levshin \u0415.S., Lobanovich E.F., Petlitskii A.N. 1990. Byulleten’ Izobretenii no 46, .84, 1992.*<\/p>\n

22. A.N. Petlitskii, V.N. Ponomar, \u041c.I. Tarasik, A.M. Yanchenko. Izv. Vuzov. Tsvetnaya Metallurgiya no 5, 185-189, 1997.*<\/p>\n

23. \u0410.G. Dutov, D.I. Brinkevich, A.N. Petlitskii. Vestnik ANB. Ser. Fiziko-Tekhnicheskie Nauki no 3, 20-26, 1996.*<\/p>\n

24. Patent Russia \u21162094904. \u041c\u041aI \u041d01L21\/322. Taran Yu.N., Kutsova V.Z., Uzlov K.I. 1997.*<\/p>\n

25. V.Z. Kutsova, V.V. Patsalyuk, V.M. Khronenko. Teoriya i Praktika Metallurgii no 2, 37, 1997.*<\/p>\n

26. Yu.N. Taran, V.Z. Kutsova, \u041a.I. Uzlov, E.S. Falkevich. Izv. AN SSSR. Neorganicheskie Materialy 27(11), 108-112, 1991.*<\/p>\n

27. Patent USA N4561171. MKI H01 21\/20. Schlosser V. Shell Austria Aktiengesellschaft. 1985.<\/p>\n

\u00a028. Patent GDR N153939. MKI 3(51) HOI L 21\/322. Kerkow H., Kreysch G., Maass K. Humboldt-Universit\u00e4t. Berlin. 1982.<\/p>\n

29. Patent GDR N156453. MKI 3(51) HOI L 21\/302. Fischer A., Schlote J., Frahnow D. Kranig S. Institut f. Phys. der Werkstoffbearb. Berlin. 1981.<\/p>\n

30. Patent GDR N214490. MKI 3(51) HOI L 21\/322. Schlapak H., Scholz G., Baumann K. VEB Gleichrichterwerk. Stahnsdorf. 1984.<\/p>\n

31. Patent GDR N226430AI. MKI 4(51) HOI L 21\/322. Nitzsche W., Kirscht F., Riepel G., Dziesiety J., Hengelhaupt Zu. VEB Mikroelektronik “Karl Marx”. Erfurt. 1985.<\/p>\n

32. Patent FRG N3117202 MKI HOI L 21\/26, 21\/324, 29\/74. Berndt D. Brown Boveri and Cie AG. 1982.<\/p>\n

33. Patent GDR N156408. MKI 3(51) HO1I L 21\/265. Dziesiety J., Ellmer K., Riepel G., Baehr R. Humboldt-Universit\u00e4t. Berlin. 1982.<\/p>\n

34. Patent USA N4539050 MKI HOI L 21\/268. Kramler J., Kuhnenfeld F., Gerber H. Wacker Chemitronic Gesellschaft f\u00fcr Electronic Grundstoffe. 1983.<\/p>\n

35. V.A. Kozlov. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, Leningrad, Ioffe FTI AN SSSR, 1988.*<\/p>\n

36. B.N. Romanyuk. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, Kiev, IP AN UkrSSR, 1992.*<\/p>\n

37. Ya. Tarui. Fundamentals of VLSI Technology, Radio i Svyaz’, Moscow, 1985.* https:\/\/doi.org\/10.1007\/978-3-642-69192-8<\/a><\/p>\n

38. S.S. Gorelik, \u041c.Ya. Dashevskii. Materials Science of Semiconductors and Dielectrics, Metallurgiya, Moscow, 1988.*<\/p>\n

39. S.M. Sze. VLSI Technology, McGraw-Hill Inc., 1983.<\/p>\n

40. Solar Energy Conversion. Solid-State Physics Aspects (ed. B.O. Seraphin), Springer-Verlag, Berlin\u2212New York, 1979.<\/p>\n

41. Yu.\u0410. Evseev. Semiconductor Devices for Power High-Voltage Converter Installations, Energiya, Moscow, 1978.*<\/p>\n

42. G.Ya. Krasnikov, N.A. Zaitsev. Silicon\u2212Silicon Dioxide System in Submicron VLSI, Tekhnosfera, Moscow, 2003.*<\/p>\n

43. V.G. Litovchenko, B.N. Romanyuk, V.P. Shapovalov, G.K. Zholudev, V.I. Dumbrov, I.V. Rudskoi. OPT no 10, 84-95, 1986.*<\/p>\n

44. V.G. Litovchenko, V.G. Popov, B.N. Romanyuk, V.V. Andrievskii, I.V. Rudskoi, D.N. Moskal. OPT no 13, 85-88, 1988.*<\/p>\n

45. V.G. Litovchenko, B.N. Romanyuk, V.G. Popov, I.V. Rudskoi, G.I. Khokhotva. OPT no 16, 37-42, 1989.*<\/p>\n

46. V.G. Litovchenko, B.N. Romanyuk. FTP 17(2), 150-153, 1983.*<\/p>\n

47. B.N. Romanyuk. OPT no 15, 1-8, 1989.*<\/p>\n

48. V.\u041a. Prokof’eva, \u0415.B. Sokolov, Zh.\u041c. Sergeev\u0430, \u041c.H. Makeev. ET Ser. 6 no 6 (260), 26-29, 1991.*<\/p>\n

49. V.\u041a. Prokof’eva. ET Ser. 6 no 6 (260), 25-26, 1991.*<\/p>\n

50. V.A. Brazhnik, \u0422.\u0410. Dolgova, V.N. Leikin, L.Yu. Pankan, \u0410.B. Spiridonov. ET Ser. 3 no 1 (117), 92-96, 1986.*<\/p>\n

51. N.\u0422. Bagraev, L.\u0415. Klyachkin, A.M. Malyarenko, V.L. Sukhanov. FTP 25(4), 644-654, 1991.*<\/p>\n

52. N.\u0422. Bagraev, L.\u0415. Klyachkin, A.M. Malyarenko, I.S. Polovtsev, V.L. Sukhanov. FTP 24(9), 1557-1562, 1990.*<\/p>\n

53. N.\u0422. Bagraev, L.\u0415. Klyachkin, A.M. Malyarenko, I.S. Polovtsev, V.L. Sukhanov. FTP 24(9), 1563-1573, 1990.*<\/p>\n

54. E.I. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.\u041c. Shmidt. FTP 16(2), 207-211, 1982.*<\/p>\n

55. \u0410.\u0422. Gorelenok, V.L. Kryukov, G.P. Furmanov. PZhTF 20(13), 60-65, 1994.*<\/p>\n

56. F.D. Kasimov, D.\u0410. Sechenov, F.G. Agaev, A.M. Svetlichnyi, O.A. Ageev. Activated Processes of the Microelectronic Technology (ed. F.D. Kasimov), ELM, Baku, 2000.*<\/p>\n

57. Z.\u0410. Iskander-zadeh, \u041c.G. Abbasov, F.D. Kasimov. Uchenye Zapiski AzTU 7(3), 239-242, 1998.*<\/p>\n

58. V.F. Strukov, S.S. Khromov, V.G. Astakhov. ME 21(2), 91-93, 1992.*<\/p>\n

59. \u0410.G. Zakharov, N.A. Krakotets. Izv. TRTU (Taganrog) no 1, 169-170, 2002.*<\/p>\n

60. N. Gerasimenko, Yu. Parkhomenko. Silicon – The Material for Nanoelectronics, Tekhnosfera, Moscow, 2007.*<\/p>\n

61. A. Efremov, A. Evtukh, N. Klyui, V. Litovchenko, V. Popov, Yu. Rassamakin, A. Sarikov, Ch. H\u00e4ssler, W. Koch. Solid State Phenomena 82-84, 719-723, 2001. https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.82-84.719<\/a><\/p>\n

62. A.A. Efremov, A.V. Sarikov. In: Extended Abstracts of the Second Int. Conf. “Porous Semiconductors-Science and Technology”. Madrid. 2000. P.172.<\/p>\n

63. A.V. Sarikov. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, IFP NANU, Kiev, 2002.*<\/p>\n

64. N.A. Filippenko. Author’s Synopsis of the Candidate of Tech. Sci. Thesis, TGRU, Taganrog, 2002.*<\/p>\n

65. A.N. Petlitskii. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, BGU, Minsk, 2004.*<\/p>\n

66. B.N. Romanyuk, V.G. Popov, V.G. Litovchenko, \u0410. \u041cisiyuk, \u0410.\u0410. Evtukh, N.I. Klyui, V.P. Mel nik. FTP 29(1), 166-173, 1995.*<\/p>\n

67. Proc. 11th Intern. Conf. “Gettering and Defect Engineering in Semiconductor Technology” GADEST. 2005.<\/p>\n

68. V.V. Bolotov, V.A. Korotchenko, \u0410.P. Mamontov, A.V. Rzhanov, L.S. Smirnov, S.S. Shaimiev. FTP 14(11), 2257-2260, 1980.*<\/p>\n

69. \u041e.Yu. Borkovskaya, N.L. Dmitruk, R.V. Konakova, V.G. Litovchenko, N.N. Soldatenko, Yu.\u0410. Tkhorik, M.Yu. Filatov, V.I. Shakhovtsov. FTP 17(7), 1349-1351, 1983.*<\/p>\n

70. \u041e.Yu. Borkovskaya, S.\u0410. Grusha, N.L. Dmitruk, A.M. Evstigneev, N.A. Klebanova, R.V. Konakova, A.N. Krasiko, \u041a.\u0410. Ismailov, I.\u041a. Sinischuk, \u041c.\u0415. Lisogorskii. ZhTF 55(10), 1977-1982, 1985.*<\/p>\n

71. I.P. Chernov, \u0410.P. Mamontov, V.A. Korotchenko. FTP 14(11), 2271-2273, 1980.*<\/p>\n

72. N.L. Dmitruk, V.G. Litovchenko. OPT no 3, 13-22, 1983.*<\/p>\n

73. \u041e.Yu. Borkovskaya, N.L. Dmitruk, V.G. Litovchenko, \u041e.N. Mischuk. FTP 23(2), 207-212, 1989.*<\/p>\n

74. Yu.S. Kleinfeld, R.V. Konakova, V.F. Sinkevich, A.A. Pavlenko. Electrotechn. \u010cas. 44(6), 177- 178, 1993.<\/p>\n

75. Physical Processes on Irradiated Semiconductors (ed. L.S. Smirnov), Nauka S\u041e, Novosibirsk, 1977.*<\/p>\n

76. V.S. Vavilov, I.\u0410. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices, Atomizdat, Moscow, 1969.*<\/p>\n

77. N.D. Langbain, \u0415.N. Shelopin. FTP 18(5), 808-811, 1984.* https:\/\/doi.org\/10.1177\/106002808401801007<\/a><\/p>\n

78. W. Corbett. Surf. Sci. 90(2), 205-239, 1979. https:\/\/doi.org\/10.1016\/0039-6028<\/a>(79)90340-6<\/p>\n

79. N.S. Boltovets, R.V. Konakova, \u0410.\u0410. Pavlenko. ET Ser. 7 no 4 (149), 59-60, 1988.*<\/p>\n

80. \u0410.\u0410. Pavlenko. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, Kiev T.G. Shevchenko University, Kiev, 1993.*<\/p>\n

81. \u0410.\u0410. Pavlenko. ET Ser. 7 no 5 (168), 44-51, 1991.*<\/p>\n

82. Author’s Certificate USSR \u21161110342. MKI H01L 21\/26. N.S. Boltovets, R.V. Konakova, \u0410.\u0410. Pavlenko. 1984. (Priority 4.05.1982).*<\/p>\n

83. N.S. Boltovets, \u041a.\u0410. Ismailov, R.V. Konakova, \u041c.B. Tagaev. ZhTF 68(10), 131-132, 1998.*<\/p>\n

\u00a084. S.T. Sah, R.N. Noyce, W. Shockley. Proc. IRE 45(9), 1228-1243, 1957. https:\/\/doi.org\/10.1109\/JRPROC.1957.278528<\/a><\/p>\n

85. S.M. Sze. Physics of Semiconductor Devices, Wiley-Interscience Publ. John Wiley & Sons, New York, 1981.<\/p>\n

86. W.C. Till, J.T. Luxon. Integrated Circuits: Materials, Devices, and Fabrication, Prentice-Hall Inc., Englewood Cliffs, N.J., 1982.<\/p>\n

87. V.P. Grigorenko, P.G. Dermenzhi, V.A. Kuzmin, \u0422.\u0422. Mnatsakanov. Simulation and Automation of Design of Power Semiconductor Devices, Energoatomizdat, Moscow, 1988.*<\/p>\n

88. S.V. Bulyarskii, N.S. Grushko. Physical Principles of Functional Diagnostics of p-n Junctions with Defects, Shtiintsa, Kishinev, 1992.*<\/p>\n

89. \u0415.V. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.\u041c. Shmidt. FTP 16(2), 207- 211, 1982.*<\/p>\n

90. \u0415.V. Ivanov, L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.\u041c. Shmidt, \u041c.V. Drozdova. PZhTF 6(14), 874-877, 1980.*<\/p>\n

91. L.B. Lopatina, V.L. Sukhanov, V.V. Tuchkevich, N.\u041c. Shmidt, B.S. Yavich. PZhTF 5(1), 11- 13, 1979.*<\/p>\n

92. L.\u0415. Klyachkin, L.B. Lopatina, A.M. Malyarenko, A.V. Nalivkin, V.L. Sukhanov, V.V. Tuchkevich. FTP 17(9), 1648-1651, 1983.*<\/p>\n

93. N.S. Boltovets, R.V. Konakova, M.B. Tagaev, T.V. Torchinskaya, L.V. Shcherbina. Functional Materials 4(4), 568-571, 1997.<\/p>\n

94. Author’s Certificate USSR \u2116682048. N.S. Boltovets, V.A. Krivutsa, \u0410.\u0410. Pavlenko.*<\/p>\n

95. \u041e.Yu. Borkovskaya, L.G. Gassanov, S.\u0410. Grusha, N.L. Dmitruk, F. Dubecky, A.M. Evstigneev, R.V. Konakova, Yu.\u0410. Tkhorik, L.S. Khazan, \u0422.\u041c. Khakimov, V.I. Shakhovtsov. Preprint no 25, IF AN UkrSSR, Kiev, 1988.*<\/p>\n

96. E.F. Venger, M. Grendel, V. Dani\u0161ka, R.V. Konakova, I.V. Prokopenko, Yu.A. Tkhorik, L.S. Khazan. Structural Relaxation in Semiconductor Crystals and Device Structures. Phoenix, Kiev, 1994.*<\/p>\n

97. Yu. Breza, M. Vesely, I.Yu. Il’in, K.A. Ismailov, R.V. Konakova, J. Liday, V.V. Milenin, A.A. Pav lenko, I.V. Prokopenko, V.A. Statov, Yu.A. Tkhorik, L.S. Khazan. In: Proc. 5th Intern. Symposium on Recent Advances in Microwave Technology, Kiev, Ukraine, Sept. 11-16, 1995, 844-927.*<\/p>\n

98. Author’s Certificate USSR \u21161107712. MKI H01L 21\/26. N.S. Boltovets, R.V. Konakova, \u0410.\u0410. Pavlenko. 1984. (Priority: 4.05.1982).*<\/p>\n

99. I.V. Grekhov, Yu.N. Serezhkin. Avalanche breakdown of p-n Junction in Semiconductors, Energiya, Leningrad, 1980.*<\/p>\n

100. Author’s Certificate USSR \u2116 1186027. MKI HO1L 21\/263. N.S. Boltovets, R.V. Konakova,\u0410.\u0410. Pavlenko. 1985. (Priority: 11.03.1984).*<\/p>\n

101. I.L. Zaytsevskiy, R.V. Konakova, V.V. Rybalka, L.V. Scherbina. ME 9(3), 253-258, 1980.*<\/p>\n

102. Author’s Certificate USSR \u21161192556 MKI HO1L 27\/08. N.S. Boltovets, R.V. Konakova, \u0410.\u0410. Pavlenko. 1985. (Priority: 11.03.1984).*<\/p>\n

103. Author’s Certificate USSR \u21161531777. MKI HO1L 31\/18. \u041a.\u0410. Ismailov, R.V. Konakova, \u0410.\u0410. Pavlenko, E.A. Soloviev, Yu.\u0410. Tkhorik, V.I. Faynberg, L.S. Khazan. 1989. (Priority: 3.11.1987).*<\/p>\n

104. Author’s Certificate USSR \u21161762697. MKI HO1L 21\/326. \u041a.\u0410. Ismailov, R.V. Konakova, \u0410.\u0410. Pavlenko, E.A. Soloviev, Yu.\u0410. Tkhorik, V.I. Faynberg, L.S. Khazan. 1992 (Priority: 6.04.1990).*<\/p>\n

105. Author’s Certificate USSR \u21161382312 MKI HO1L 21\/326. S.I. Volkov, A.V. Davydova, \u0410.P. Derevenko, R.V. Konakova, \u0410.\u0410. Pavlenko, Yu.\u0410. Tkhorik, V.I. Faynberg. 1987. (Priority: 19.05.1986).*<\/p>\n

106. G. Garyagdyev. Author’s Synopsis of the Doctor of Phys.-Math. Sci. Thesis, VU, Vilnius, 1990.*<\/p>\n

107. I.V. Ostrovskii, \u0410.B. Nadtochii, \u0410.\u0410. Podolyan. FTP 36(4), 389-391, 2002.* https:\/\/doi.org\/10.1134\/1.1469179<\/a><\/p>\n

108. P.B. Parchinskii, S.I. Vlasov, L.G. Ligay, \u041e.Yu. Kzukina. PZhTF 29(9), 83-88, 2003.*<\/p>\n

109. V.N. Zaveryukhin, V.D. Krevchik, R.\u0410. Muminov, \u0410.Sh. Shamagdiev. FTP 20(3), 525-528, 1986.*<\/p>\n

110. I.V. Ostrovskii. Acoustoluminescence and Crystal Defects, Vyscha Shkola, Kiev, 1993.*<\/p>\n

111. \u041e.Ya. Olikh. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, T.G. Shevchenko KNU, Kiev, 2000.*<\/p>\n

112. \u041e.Ya. Olikh, I.V. Ostrovskii. FTT 44(7), 1198-1202, 2002.* https:\/\/doi.org\/10.1023\/A:1014766019494<\/a><\/p>\n

113. \u0410.P. Zdebskii, V.L. Korchnaya, \u0422.V. Torchinskaya, \u041c.\u041a. Sheinkman. PZhTF 12(2), 76-81, 1986.*<\/p>\n

114. \u0410.P. Zdebskii, \u041c.I. Lisyanskii, N.B. Lukyanchikova, \u041c.\u041a. Sheinkman. PZhTF 13(16), 1009- 1013, 1987.*<\/p>\n

115. Author’s Certificate USSR \u21161477177. MKI HO1 L 21\/304. V.L. Gromashevskii, \u041a.\u0410. Ismailov, R.V. Konakova, Yu.\u0410. Tkhorik, N.P. Tat’yanenko, V.I. Faynberg, N.S. Khilimova. IP AN UkrSSR 1986.*<\/p>\n

116. V.L. Gromashevskii, \u0410.P. Derevyanko, \u041a.\u0410. Ismailov, R.V. Konakova, \u041c.B. Tagaev, N.P. Tat’yanenko. PKOM no 6, 132-135, 1996.*<\/p>\n

117. I.B. Ermolovich, V.V. Milenin, R.V. Konakova, I.V. Prokopenko, V.L. Gromashevskii. PZhTF 22(6), 33-36, 1996.*<\/p>\n

118. I.B. Ermolovich, V.V. Milenin, R.V. Konakova, L.N. Primenko, I.V. Prokopenko, V.L. Gromashevskii. FTP 31(4), 503-508, 1997.* https:\/\/doi.org\/10.1134\/1.1187177<\/a><\/p>\n

119. Yu.V. Bykov, A.G. Eremeev, V.I. Pashkov, V.A. Perevoschikov, V.D. Skupov. Deposited at VINITI (no 2322-\u041291) 1991.*<\/p>\n

120. V.I. Pashkov, V.A. Perevoschikov, V.D. Skupov. PZhTF 20(8), 14-18, 1994.*<\/p>\n

121. D.E. Abdurakhimov, V.L. Vereschagin, V.P. Kalinushkin, V.A. Nikishin, M.G. Ploppa, M.D. Rai zer. Kratkie Soobscheniya po Fizike FIAN no 6, 27-29. 1991.*<\/p>\n

122. D.E. Abdurakhimov, F.Sh. Vakhidov, V.L. Vereschagin, V.P. Kalinushkin, M.G. Ploppa, M.D. Rai zer ME 20(1), 21-25. 1991.* https:\/\/doi.org\/10.1108\/eb042865<\/a><\/p>\n

123. D.E. Abdurakhimov, P.N. Bochikashvili, V.L. Vereschagin, V.P. Kalinushkin, A.L, Obukhov, M.G. Ploppa, M.D. Raizer, E.P. Rau. ME 21(1), 82-89, 1992.*<\/p>\n

124. Yu.V. Bykov, A.G. Eremeev, N.A. Zharova, I.V. Plotnikov, \u041a.I. Rybakov, \u041c.N. Drozdov, Yu.N. Drozdov, V.D. Skupov. Izv. Vuzov. Radiofizika 46(8-9), 836-843, 2003.* https:\/\/doi.org\/10.1023\/B:RAQE.0000025008.97954.1c<\/a><\/p>\n

125. \u041c.N. Levin, G.V. Semenova, A.V. Tatarintsev, \u041e.N. Shumskaya. PZhTF 31(17), 89-94, 2005.*<\/p>\n

126. \u041c.N. Levin, G.V. Semenova, \u0422.P. Sushkova, V.V. Postnikov, B.L. Agapov. FTT 45(4), 609-612, 2003.* https:\/\/doi.org\/10.1134\/1.1568998<\/a><\/p>\n

127. \u041c.N. Levin, A.V. Tatarintsev, O.A. Kostsova, A.M. Kostsov. ZhTF 73(10), 85-87, 2003.*<\/p>\n

128. \u041c.N. Levin, G.V. Semenova, \u0422.P. Sushkova, E.A. Dolgopolova, V.V. Postnikov. PZhTF 28(19), 50-55, 2002.* https:\/\/doi.org\/10.1134\/1.1519017<\/a><\/p>\n

129. V.I. Belyavskii, Yu.V. Ivankov, \u041c.N. Levin. FTT 48(7), 1255-1259, 2006.* https:\/\/doi.org\/10.1134\/S106378340607018<\/a><\/p>\n

130. \u0410.L. Danilyuk, A.I. Nareyko. Poverkhnost’ no 9, 27-33, 1996.*<\/p>\n

131. V.N. Davydov, E.A. Loskutova, \u0415.P. Nayden. FTP 23(9), 1596-1600, 1989.*<\/p>\n

132. N.V. Kukushkin, S.N. Postnikov, Yu.\u0410. Terman, V.M. Kedyarkin. ZhTF 55(10), 2083-2084, 1985.*<\/p>\n

133. \u041c.N. Levin, B.\u0410. Zon. ZhETF 11(4), 1373-1397, 1997.*<\/p>\n

134. Yu.L. Kol’chenko. Author’s Synopsis of the Candidate of Phys.-Math. Sci. Thesis, T.G. Shevchenko KNU, Kiev, 2006.*<\/p>\n

135. G.I. Distler, V.M. Kanevskii, V.V. Moskvin, S.N. Postnikov, L.\u0410. Ryabinin, V.P. Sidorov, G.D. Shnyrev. DAN SSSR 268(3), 591-593, 1983.*<\/p>\n

136. \u0410.G. Kadmenskii, S.G. Kadmenskii, \u041c.N. Levin, V.M. Maslovskii, V.\u0415. Chernyshev. PZhTF 19(3), 41-45, 1993.*<\/p>\n

137. \u041c.N. Levin, Yu.\u041e. Lichmanov, V.M. Maslovskii. PZhTF 20(4), 27-31, 1994.*<\/p>\n

138. V.M. Maslovskii, Yu.\u0410. Klimov, N.S. Samsonov, \u0415.V. Simanovich. FTP 28(5), 772-777, 1994.*<\/p>\n

139. \u041c.N. Levin, G.V. Semenova, \u0422.P. Sushkova. DAN, 388(5), 608-610, 2003.*<\/p>\n

140. Yu.\u0410. Klimov, V.M. Maslovskii, \u041a.V. Kholodnov. ET Ser. 3 no 5 (144), 22-26, 1991.*<\/p>\n

141. Yu.\u0410. Klimov, V.M. Maslovskii, V.V. Tarasenko. ET Ser. 3 no 5 (139), 20-25, 1990.* https:\/\/doi.org\/10.1007\/BF02196315<\/a><\/p>\n

142. V.M. Maslovskii, V.V. Minaev, S.V. Naumov, S.N. Postnikov. ET Ser. 3 no 5 (134), 59-60, 1989.*<\/p>\n

143. V.A. Novichikhin, S.N. Postnikov, L.\u0410. Ryabinin. A Plant for Pulse Magnetic Treatment of Materials, NIIM GGU, Gor’ky, 1983.*<\/p>\n

Conclusion<\/p>\n

1. N. Gerasimenko, Yu. Parkhomenko. Silicon – The Material for Nanoelectronics, Tekhnosfera, Moscow, 2007.*<\/p>\n

2. V. Yudintsev. Electronics: Science. Technology. Business no 3, 124-129, 2008; no 4, 108-113, 2008.*<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"

Project: Ukrainian scientific book in a foreign language Editors: A.E. Belyaev, N.S. Boltovets, E.F. Venger, Ya.Ya. Kudryk, V.V. Milenin, G.V. Milenin Year: 2011 Pages: 182 ISBN: 978-966-360-176-2 Publication Language: English Publisher: PH “Akademperiodyka” Place Published: Kyiv doi: https:\/\/doi.org\/10.15407\/akademperiodyka.176.182 The monograph deals with the physical phenomena occurring in the metal-semi- conductor junction layer and at microwave […]<\/p>\n","protected":false},"author":1,"featured_media":1754,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[4,21,24],"tags":[],"class_list":["post-1752","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-books","category-scientific_monographs","category-ukrainian_scientifical_book"],"_links":{"self":[{"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/posts\/1752","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/comments?post=1752"}],"version-history":[{"count":5,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/posts\/1752\/revisions"}],"predecessor-version":[{"id":3560,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/posts\/1752\/revisions\/3560"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/media\/1754"}],"wp:attachment":[{"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/media?parent=1752"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/categories?post=1752"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/akademperiodyka.org.ua\/en\/wp-json\/wp\/v2\/tags?post=1752"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}